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PCF85103C-2P-00 PDF预览

PCF85103C-2P-00

更新时间: 2024-11-19 10:16:47
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恩智浦 - NXP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
20页 112K
描述
256 x 8-bit CMOS EEPROM with I2C-bus interface

PCF85103C-2P-00 数据手册

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PCF85103C-2  
256 × 8-bit CMOS EEPROM with I2C-bus interface  
Rev. 04 — 22 October 2004  
Product data  
1. Description  
The PCF85103C-2 is a floating gate Electrically Erasable Programmable Read Only  
Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an  
internal redundant storage code, it is fault tolerant to single bit errors. This feature  
dramatically increases the reliability compared to conventional EEPROMs. Power  
consumption is low due to the full CMOS technology used. The programming voltage  
is generated on-chip, using a voltage multiplier.  
Data bytes are received and transmitted via the serial I2C-bus. Up to eight  
PCF85103C-2 devices may be connected to the I2C-bus. Chip select is accomplished  
by three address inputs (A0, A1 and A2).  
The PCF85103C-2 is identical to PCF85102C-2 except for the fixed I2C address,  
allowing up to eight PCF85102C-2 and eight PCF85103C-2 on the same I2C-bus.  
2. Features  
Low power CMOS:  
2.0 mA maximum operating current  
maximum standby current 10 µA (at 6.0 V), typical 4 µA  
Non-volatile storage of 2 kbits organized as 256 × 8-bit  
Single supply with full operation down to 2.5 V  
On-chip voltage multiplier  
Serial input/output I2C-bus  
Write operations:  
byte write mode  
8-byte page write mode (minimizes total write time per byte)  
Read operations:  
sequential read  
random read  
Internal timer for writing (no external components)  
Internal power-on reset  
0 kHz to 100 kHz clock frequency  
High reliability by using a redundant storage code  
Endurance: 1,000,000 Erase/Write (E/W) cycles at Tamb = 22 °C  
10 years non-volatile data retention time  
Pin compatible to: PCF8570, PCF8571, PCF8572, PCA8581, PCF8582, and  
PCF85102  

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