Datasheet > PCF85103C-2T-00

PCF85103C-2T-00

更新时间： 2024-11-19 10:16:47

品牌	Logo	应用领域
恩智浦 - NXP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
20页	112K
描述
256 x 8-bit CMOS EEPROM with I2C-bus interface

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PCF85103C-2T-00 数据手册

PCF85103C-2

256 × 8-bit CMOS EEPROM with I²C-bus interface

Rev. 04 — 22 October 2004

Product data

1. Description

The PCF85103C-2 is a ﬂoating gate Electrically Erasable Programmable Read Only

Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an

internal redundant storage code, it is fault tolerant to single bit errors. This feature

dramatically increases the reliability compared to conventional EEPROMs. Power

consumption is low due to the full CMOS technology used. The programming voltage

is generated on-chip, using a voltage multiplier.

Data bytes are received and transmitted via the serial I²C-bus. Up to eight

PCF85103C-2 devices may be connected to the I²C-bus. Chip select is accomplished

by three address inputs (A0, A1 and A2).

The PCF85103C-2 is identical to PCF85102C-2 except for the ﬁxed I²C address,

allowing up to eight PCF85102C-2 and eight PCF85103C-2 on the same I²C-bus.

2. Features

■ Low power CMOS:

◆ 2.0 mA maximum operating current

◆ maximum standby current 10 µA (at 6.0 V), typical 4 µA

■ Non-volatile storage of 2 kbits organized as 256 × 8-bit

■ Single supply with full operation down to 2.5 V

■ On-chip voltage multiplier

■ Serial input/output I²C-bus

■ Write operations:

◆ byte write mode

◆ 8-byte page write mode (minimizes total write time per byte)

■ Read operations:

◆ sequential read

◆ random read

■ Internal timer for writing (no external components)

■ Internal power-on reset

■ 0 kHz to 100 kHz clock frequency

■ High reliability by using a redundant storage code

■ Endurance: 1,000,000 Erase/Write (E/W) cycles at T_amb= 22 °C

■ 10 years non-volatile data retention time

■ Pin compatible to: PCF8570, PCF8571, PCF8572, PCA8581, PCF8582, and

PCF85102

12 3 4 5 6 7...20

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