Datasheet > PBSS5320T-Q

PBSS5320T-Q

更新时间： 2024-11-26 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	232K
描述
20 V, 3 A PNP low VCEsat transistorProduction

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PBSS5320T-Q 数据手册

PBSS5320T-Q

20 V, 3 A PNP low VCEsat transistor

21 June 2022

Product data sheet

1. General description

PNP low V_CEsattransistor in in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS4320T

2. Features and benefits

•

Low collector-emitter saturation voltage V_CEsatand corresponding low R_CEsat

•

High collector current capability

High collector current gain

Improved efficiency due to reduced heat generation

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Power management applications

Low and medium power DC/DC convertors

Supply line switching

Battery chargers

Linear voltage regulation with low voltage drop-out (LDO).

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-20

I_C

collector current

-2

-3

I_CRM

repetitive peak collector δ ≤ 0.25; Operated under pulsed

current

conditions; t_p≤ 100 ms

R_CEsat

collector-emitter

saturation resistance

I_C= -2 A; I_B= -200 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

105

mΩ

12 3 4 5 6 7...10

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