Datasheet > PBHV9414Z

PBHV9414Z

更新时间： 2024-11-19 11:13:55

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	712K
描述
140 V, 4 A PNP high-voltage low VCEsat (BISS) transistorProduction

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PBHV9414Z 数据手册

PBHV9414Z

140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor

24 January 2014

Product data sheet

1. General description

PNP high-voltage low V_CEsatBreakthrough Small Signal (BISS) transistor in a medium

power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

AEC-Q101 qualified

3. Applications

LED driver for LED chain module

LCD backlighting

Automotive motor management

Switch Mode Power Supply (SMPS)

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-140

I_C

collector current

-4

I_CM

peak collector current single pulse; t_p≤ 1 ms

-10

150

R_CEsat

collector-emitter

I_C= -1 A; I_B= -100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

100

mΩ

saturation resistance

12 3 4 5 6 7...14

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