Datasheet > PBHV9560Z

PBHV9560Z

更新时间： 2024-11-20 20:38:47

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
14页	214K
描述
SMALL SIGNAL TRANSISTOR

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技术参数
数据手册

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PBHV9560Z 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Base Number Matches：	1

PBHV9560Z 数据手册

PBHV9560Z

600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor

12 August 2014

Product data sheet

1. General description

PNP high-voltage low V_CEsatBreakthrough In Small Signal (BISS) transistor in a medium

power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8560Z

2. Features and benefits

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_C

High collector current gain h_FEat high I_C

AEC-Q101 qualified

3. Applications

Electronic ballast for fluorescent lighting

LED driver for LED chain module

LCD backlighting

•

HID front lighting

Automotive motor management

Hook switch for wired telecom

Switch Mode Power Supply (SMPS)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-600

I_C

collector current

DC current gain

-0.5

h_FE

V_CE= -10 V; I_C= -50 mA; T_amb= 25 °C

130

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