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PBHV9560Z PDF预览

PBHV9560Z

更新时间: 2024-11-21 11:12:23
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
14页 700K
描述
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorProduction

PBHV9560Z 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.54
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:600 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):38 MHz
Base Number Matches:1

PBHV9560Z 数据手册

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PBHV9560Z  
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor  
12 August 2014  
Product data sheet  
1. General description  
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium  
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.  
NPN complement: PBHV8560Z  
2. Features and benefits  
High voltage  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC  
High collector current gain hFE at high IC  
AEC-Q101 qualified  
3. Applications  
Electronic ballast for fluorescent lighting  
LED driver for LED chain module  
LCD backlighting  
HID front lighting  
Automotive motor management  
Hook switch for wired telecom  
Switch Mode Power Supply (SMPS)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-600  
V
IC  
collector current  
DC current gain  
-
-
-0.5  
-
A
hFE  
VCE = -10 V; IC = -50 mA; Tamb = 25 °C  
70  
130  
 
 
 
 

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