Datasheet > PBHV9540X

PBHV9540X

更新时间： 2024-11-19 11:13:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	228K
描述
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorProduction

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技术参数
数据手册

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PBHV9540X 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.73	Samacsys Description：	NXP Semiconductors
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

PBHV9540X 数据手册

PBHV9540X

400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor

28 September 2017

Product data sheet

1. General description

PNP high-voltage low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62)

medium power and flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: PBHV8540X

2. Features and benefits

•

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

AEC-Q101 qualified

3. Applications

•

Electronic ballast for fluorescent lighting

LED driver for LED chain module

LCD backlighting

High Intensity Discharge (HID) front lighting

Automotive motor management

Hook switch for wired telecom

Switch mode power supply

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-400

I_C

collector current

-0.5

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

h_FE

R_CEsat

DC current gain

V_CE= -5 V; I_C= -20 mA; T_amb= 25 °C

140

450

collector-emitter

saturation resistance

I_C= -200 mA; I_B= -40 mA;

T_amb= 25 °C

[1]

2000 mΩ

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...13

中文翻译

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