Datasheet > PBHV9540X-Q

PBHV9540X-Q

更新时间： 2024-11-21 15:18:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	245K
描述
400 V, 0.5 A PNP high-voltage low VCEsat transistorProduction

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PBHV9540X-Q 数据手册

PBHV9540X-Q

400 V, 0.5 A PNP high-voltage low VCEsat transistor

18 July 2023

Product data sheet

1. General description

PNP high-voltage low V_CEsattransistor in a SOT89 (SC-62) medium power and flat lead Surface-

Mounted Device (SMD) plastic package.

NPN complement: PBHV8540X-Q

2. Features and benefits

•

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

AEC-Q101 qualified

3. Applications

•

Electronic ballast for fluorescent lighting

LED driver for LED chain module

LCD backlighting

High Intensity Discharge (HID) front lighting

Automotive motor management

Hook switch for wired telecom

Switch mode power supply

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-400

I_C

collector current

-0.5

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

h_FE

R_CEsat

DC current gain

V_CE= -5 V; I_C= -20 mA; T_amb= 25 °C

140

450

collector-emitter

saturation resistance

I_C= -200 mA; I_B= -40 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

2000 mΩ

12 3 4 5 6 7...13

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