Datasheet > PBHV9414Z-Q

PBHV9414Z-Q

更新时间： 2024-03-03 10:11:38

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	262K
描述
140 V, 4 A PNP high-voltage low VCEsat transistorProduction

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PBHV9414Z-Q 数据手册

PBHV9414Z-Q

140 V, 4 A PNP high-voltage low VCEsat transistor

17 July 2023

Product data sheet

1. General description

PNP high-voltage low V_CEsattransistor in a medium power SOT223 (SC-73) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain h_FEat high I_C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

LED driver for LED chain module

LCD backlighting

Automotive motor management

Switch Mode Power Supply (SMPS)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-140

I_C

collector current

-4

I_CM

peak collector current single pulse; t_p≤ 1 ms

-10

150

R_CEsat

collector-emitter

I_C= -1 A; I_B= -100 mA; pulsed; t_p≤

100

mΩ

saturation resistance

300 µs; δ ≤ 0.02; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

collector

emitter

collector

sym028

SC-73 (SOT223)

12 3 4 5 6 7...12

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