Datasheet > PBHV9515QA

PBHV9515QA

更新时间： 2024-02-15 12:52:25

品牌	Logo	应用领域
安世 - NEXPERIA		开关光电二极管晶体管
页数	文件大小	规格书
17页	724K
描述
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistorProduction

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PBHV9515QA 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Base Number Matches：	1

PBHV9515QA 数据手册

PBHV9515QA

150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor

19 November 2015

Product data sheet

1. General description

PNP high-voltage low V_CEsatBreakthrough In Small Signal (BISS) transistor in a leadless

ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package

with visible and solderable side pads.

NPN complement: PBHV8515QA.

2. Features and benefits

High voltage

•

Low collector-emitter saturation voltage V_CEsat

High collector current capability I_Cand I_CM

High collector current gain (h_FE) at high I_C

Low package height of 0.37 mm

AEC-Q101 qualified

Suitable for Automatic Optical Inspection (AOI) of solder joint

3. Applications

LED driver for LED chain module

High Intensity Discharge (HID) front lighting

Automotive motor management

•

Switch Mode Power Supply (SMPS)

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-150

I_C

collector current

DC current gain

-500

h_FE

V_CE= -10 V; I_C= -100 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

100

200

12 3 4 5 6 7...17

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