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PBHV9515QA PDF预览

PBHV9515QA

更新时间: 2024-11-21 11:13:19
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
17页 724K
描述
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistorProduction

PBHV9515QA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-N3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:4.57
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PDSO-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
参考标准:AEC-Q101; IEC-60134表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):75 MHz
Base Number Matches:1

PBHV9515QA 数据手册

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PBHV9515QA  
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor  
19 November 2015  
Product data sheet  
1. General description  
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless  
ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package  
with visible and solderable side pads.  
NPN complement: PBHV8515QA.  
2. Features and benefits  
High voltage  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC and ICM  
High collector current gain (hFE) at high IC  
Low package height of 0.37 mm  
AEC-Q101 qualified  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
3. Applications  
LED driver for LED chain module  
High Intensity Discharge (HID) front lighting  
Automotive motor management  
Switch Mode Power Supply (SMPS)  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-150  
V
IC  
collector current  
DC current gain  
-
-
-500  
-
mA  
hFE  
VCE = -10 V; IC = -100 mA; pulsed;  
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C  
100  
200  
 
 
 
 

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