Datasheet > PBHV9515QA

PBHV9515QA

更新时间： 2024-02-16 03:29:15

品牌	Logo	应用领域
安世 - NEXPERIA		开关光电二极管晶体管
页数	文件大小	规格书
17页	724K
描述
150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistorProduction

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PBHV9515QA 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Base Number Matches：	1

PBHV9515QA 数据手册

Nexperia

PBHV9515QA

150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor

9. Thermal characteristics

Table 6.

Symbol

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

385

209

169

232

125

Unit

K/W

R_th(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

[2]

[3]

[4]

[5]

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[3]

[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm².

[5]

aaa-007845

duty cycle = 1

th(j-a)

(K/W)

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

-5

-4

-3

-2

-1

(s)

FR4 PCB, single-sided copper, standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBHV9515QA

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Product data sheet

19 November 2015

5 / 17

1 2 3 456 7 8...17

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