MOSFET – Power, Single
N-Channel
40 V, 14 mW, 26 A
NVTFS5C478NL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• NVTFS5C478NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
14 mW @ 10 V
25 mW @ 4.5 V
• These Devices are Pb−Free and are RoHS Compliant
40 V
26 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
N−Channel
D (5 − 8)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
26
A
C
D
q
JC
T
C
18
(Notes 1, 2, 3, 4)
Steady
State
G (4)
Power Dissipation
T
C
P
20
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
10
S (1, 2, 3)
Continuous Drain
Current R
T = 25°C
A
I
D
10
q
JA
T = 100°C
A
8.0
3.0
2.0
104
(Notes 1, 3, 4)
Steady
State
MARKING DIAGRAM
Power Dissipation
T = 25°C
A
P
W
1
D
R
(Notes 1, 3)
1
q
JA
S
S
S
G
D
D
D
D
T = 100°C
A
XXXX
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
XXXX = Specific Device Code
Source Current (Body Diode)
I
15
43
A
S
A
Y
= Assembly Location
= Year
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
WW
G
= Work Week
= Pb−Free Package
Energy (I
= 1.4 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
8.2
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
51
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
September, 2019 − Rev. 2
NVTFS5C478NL/D
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