Datasheet > OD-880E

OD-880E

更新时间： 2024-11-09 04:12:19

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	365K
描述
HIGH-POWER GaAlAs IR EMITTERS

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数据手册

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OD-880E 数据手册

HIGH-POWERꢀGaAlAsꢀIRꢀEMITTERS

OD-880E

FEATURES

ANODE

.145

MAX

• High reliability liquid-phase epitaxially grown GaAlAs

• 880nm peak emission

(CASE)

EPOXY

DOME

.209

.220

.080

.017

• High uniform output

• TO-46 Header

.178

.195

.100

All dimensions are nominal in inches unless otherwise

specified.

.041

1.00

MIN

.036

45°

CATHODE

.022

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I = 100mA

Peak Emission Wavelength, L

880

Spectral Bandwidth at 50%, $L

Half Intensity Beam Angle, Q

I = 50mA

Deg

Volts

Forward Voltage, V

I = 100mA

1.55

1.9

Reverse Breakdown Voltage, V

Capacitance, C

Rise Time

= 10MA

= 0V

0.5

Msec

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10Ms, 400Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

260°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C TO 100°C

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

400°C/W Typical

135°C/W Typical

Heat transfer minimized by measuring in still air with minimum heat conducting through leads

Air circulating at a rapid rate to keep case temperature at 25°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

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