5秒后页面跳转
OD-880F1 PDF预览

OD-880F1

更新时间: 2024-01-05 11:56:56
品牌 Logo 应用领域
其他 - ETC 高功率电源
页数 文件大小 规格书
2页 76K
描述
HIGH POWER GAAIAS IR EMITTERS

OD-880F1 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:HERMETICALLY SEALED, TO-46, 2 PINReach Compliance Code:unknown
HTS代码:8541.40.20.00风险等级:5.67
其他特性:HIGH RELIABILITY配置:SINGLE
最大正向电流:0.1 A功能数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:INFRARED LED标称输出功率:8 mW
峰值波长:880 nm形状:ROUND
尺寸:3.8862 mmBase Number Matches:1

OD-880F1 数据手册

 浏览型号OD-880F1的Datasheet PDF文件第2页 
HIGH-POWER GaAlAs IR EMITTERS  
OD-880F  
FEATURES  
1.00  
MIN.  
ANODE  
(CASE)  
• High reliability liquid-phase epitaxially grown GaAlAs  
GLASS  
.209  
.212  
DOME  
.015  
• 880nm peak emission for optimum matching with  
ODD-45W photodiode  
• Wide range of linear power output  
.183 .152  
.186 .154  
.100  
• Hermetically sealed TO-46 package  
• Narrow angle for long distance applications  
• OD-880F1 selected to meet minimum radiant intensity  
.041  
.017  
.030  
.040  
.036  
CATHODE  
All surfaces are gold plated. Dimensions are nominal  
values in inches unless otherwise specified. Window  
caps are welded to the case.  
45°  
.197  
.205  
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C  
PARAMETERS  
TEST CONDITIONS  
MIN  
15  
TYP  
MAX  
UNITS  
mW  
OD-880F  
OD-880F1  
17  
8
Total Power Output, P  
o
I = 100mA  
F
OD-880F  
OD-880F1  
135  
160  
Radiant Intensity, I  
e
mW/sr  
nm  
120  
Peak Emission Wavelength, λ  
880  
80  
P
nm  
I = 50mA  
F
Spectral Bandwidth at 50%, ∆λ  
Half Intensity Beam Angle, θ  
Deg  
Volts  
Volts  
pF  
8
I = 100mA  
F
1.9  
Forward Voltage, V  
F
1.55  
30  
I
R
V
= 10µA  
5
Reverse Breakdown Voltage, V  
Capacitance, C  
Rise Time  
R
= 0V  
R
17  
µsec  
µsec  
0.5  
0.5  
Fall Time  
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE  
1
Power Dissipation  
190mW  
100mA  
3A  
Continuous Forward Current  
2
Peak Forward Current (10µs, 400Hz)  
Reverse Voltage  
5V  
Lead Soldering Temperature (1/16" from case for 10sec)  
240°C  
1
2
Derate per Thermal Derating Curve above 25°C  
Derate linearly above 25°C  
THERMAL PARAMETERS  
Storage and Operating Temperature Range  
-55°C to 100°C  
Maximum Junction Temperature  
100°C  
1
Thermal Resistance, R  
THJA  
2
Thermal Resistance, R  
THJA  
350°C/W Typical  
115°C/W Typical  
1
2
Heat transfer minimized by measuring in still air with minimum heat conducting through leads  
Air circulating at a rapid rate to keep case temperature at 25°C  
750 Mitchell Road, Newbury Park, California 91320  
Phone: (805) 499-0335 Fax: (805) 499-8108  
Email: sales@optodiode.com Web Site: www.optodiode.com  
Page 1 of 2  

与OD-880F1相关器件

型号 品牌 描述 获取价格 数据表
OD880FHT OPTODIODE HIGH TEMPERATURE GaAlAs IR EMITTERS

获取价格

OD-880FHT OPTODIODE HIGH TEMPERATURE GaAlAs IR EMITTERS

获取价格

OD-880FJ OPTODIODE HI-REL GaAlAs IR EMITTERS

获取价格

OD880L OPTODIODE HIGH-POWER GaAlAs IR EMITTERS

获取价格

OD-880L OPTODIODE HIGH-POWER GaAlAs IR EMITTERS

获取价格

OD880LHT OPTODIODE HIGH TEMPERATURE GaAlAs IR EMITTERS

获取价格