HIGH-POWER GaAlAs IR EMITTERS
OD-880F
FEATURES
1.00
MIN.
ANODE
(CASE)
• High reliability liquid-phase epitaxially grown GaAlAs
GLASS
.209
.212
DOME
.015
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
.183 .152
.186 .154
.100
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
.041
.017
.030
.040
.036
CATHODE
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
45°
.197
.205
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
15
TYP
MAX
UNITS
mW
OD-880F
OD-880F1
17
8
Total Power Output, P
o
I = 100mA
F
OD-880F
OD-880F1
135
160
Radiant Intensity, I
e
mW/sr
nm
120
Peak Emission Wavelength, λ
880
80
P
nm
I = 50mA
F
Spectral Bandwidth at 50%, ∆λ
Half Intensity Beam Angle, θ
Deg
Volts
Volts
pF
8
I = 100mA
F
1.9
Forward Voltage, V
F
1.55
30
I
R
V
= 10µA
5
Reverse Breakdown Voltage, V
Capacitance, C
Rise Time
R
= 0V
R
17
µsec
µsec
0.5
0.5
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
1
Power Dissipation
190mW
100mA
3A
Continuous Forward Current
2
Peak Forward Current (10µs, 400Hz)
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
240°C
1
2
Derate per Thermal Derating Curve above 25°C
Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
350°C/W Typical
115°C/W Typical
1
2
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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