Datasheet > OD880F1

OD880F1

更新时间： 2024-09-16 22:23:43

品牌	Logo	应用领域
其他 - ETC		高功率电源
页数	文件大小	规格书
2页	76K
描述
HIGH POWER GAAIAS IR EMITTERS

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OD880F1 数据手册

HIGH-POWER GaAlAs IR EMITTERS

OD-880F

FEATURES

1.00

MIN.

ANODE

(CASE)

• High reliability liquid-phase epitaxially grown GaAlAs

GLASS

.209

.212

DOME

.015

• 880nm peak emission for optimum matching with

ODD-45W photodiode

• Wide range of linear power output

.183 .152

.186 .154

.100

• Hermetically sealed TO-46 package

• Narrow angle for long distance applications

• OD-880F1 selected to meet minimum radiant intensity

.041

.017

.030

.040

.036

CATHODE

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Window

caps are welded to the case.

45°

.197

.205

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OD-880F

OD-880F1

Total Power Output, P

I = 100mA

OD-880F

OD-880F1

135

160

Radiant Intensity, I

mW/sr

120

Peak Emission Wavelength, λ

880

I = 50mA

Spectral Bandwidth at 50%, ∆λ

Half Intensity Beam Angle, θ

Deg

Volts

I = 100mA

1.9

Forward Voltage, V

1.55

= 10µA

Reverse Breakdown Voltage, V

Capacitance, C

Rise Time

= 0V

µsec

0.5

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10µs, 400Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

240°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

-55°C to 100°C

Maximum Junction Temperature

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

350°C/W Typical

115°C/W Typical

Heat transfer minimized by measuring in still air with minimum heat conducting through leads

Air circulating at a rapid rate to keep case temperature at 25°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335 Fax: (805) 499-8108

Email: sales@optodiode.com Web Site: www.optodiode.com

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