HIGH-POWER GaAlAs IR EMITTERS
OD-880W
FEATURES
1.00
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
MIN.
ANODE
(CASE)
GLASS
.006 HIGH
MAX
.209
.220
.015
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Wide emission angle to cover a large area
.183 .152
.187 .156
.100
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
.041
.017
.098
.112
.036
45°
CATHODE
.143
.150
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
TEST CONDITIONS
MIN
18
TYP
20
MAX
UNITS
mW
o
I = 100mA
F
Radiant Intensity, I
16
mW/sr
nm
e
Peak Emission Wavelength, λ
880
80
P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
nm
I = 50mA
F
70
5
80
Deg
Volts
Volts
pF
I = 100mA
F
Forward Voltage, V
F
1.55
30
1.9
I
= 10μA
Reverse Breakdown Voltage, V
Capacitance, C
Rise Time
R
V
R
= 0V
R
17
0.5
0.5
μsec
μsec
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
1
Power Dissipation
190mW
100mA
3A
Continuous Forward Current
2
Peak Forward Current (10μs, 400Hz)
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1
Derate per Thermal Derating Curve above 25°C
Derate linearly above 25°C
2
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-55°C TO 100°C
100°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
400°C/W Typical
135°C/W Typical
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
Air circulating at a rapid rate to keep case temperature at 25°C
2
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013