Datasheet > OD880L

OD880L

更新时间： 2022-05-09 07:28:47

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OPTODIODE		/
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描述
HIGH-POWER GaAlAs IR EMITTERS

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OD880L 数据手册

HIGH-POWER GaAlAs IR EMITTERS

OD-880L

FEATURES

1.00

• High reliability liquid-phase epitaxially grown GaAlAs

• 880nm peak emission for optimum matching with

ODD-45W photodiode

MIN.

ANODE

(CASE)

GLASS

DOME

.209

.220

.015

• Wide range of linear power output

• Hermetically sealed TO-46 package

• Medium emission angle for best coverage/power

density

.183 .152

.186 .156

.100

.041

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Window

caps are welded to the case.

.017

.024

.043

.036

45°

CATHODE

.143

.150

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

Total Power Output, P

TEST CONDITIONS

MIN

TYP

MAX

UNITS

I = 100mA

Radiant Intensity, I

mW/sr

Peak Emission Wavelength, λ

880

I = 50mA

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

Deg

Volts

I = 100mA

Forward Voltage, V

1.55

1.9

= 10μA

Reverse Breakdown Voltage, V

Capacitance, C

Rise Time

= 0V

0.5

μsec

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10μs, 400Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

260°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C TO 100°C

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

400°C/W Typical

135°C/W Typical

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

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