Datasheet > OD-880F

OD-880F

更新时间： 2024-01-05 11:49:04

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OPTODIODE		/
页数	文件大小	规格书
2页	370K
描述
HIGH-POWER GaAlAs IR EMITTERS

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技术参数
数据手册

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OD-880F 技术参数

生命周期：	Contact Manufacturer	包装说明：	HERMETICALLY SEALED, TO-46, 2 PIN
Reach Compliance Code：	unknown	ECCN代码：	3A001.A.2.A
HTS代码：	8541.40.20.00	风险等级：	5.67
其他特性：	HIGH RELIABILITY	配置：	SINGLE
最大正向电流：	0.1 A	最大正向电压：	1.9 V
安装特点：	THROUGH HOLE MOUNT	功能数量：	1
最高工作温度：	150 °C	最低工作温度：	-65 °C
光电设备类型：	INFRARED LED	标称输出功率：	9 mW
峰值波长：	880 nm	最长响应时间：	5e-7 s
最大反向电压：	5 V	半导体材料：	GaAlAs
形状：	ROUND	尺寸：	3.91 mm
光谱带宽：	5e-8 m	子类别：	Infrared LEDs
表面贴装：	NO	视角：	80 deg
Base Number Matches：	1

OD-880F 数据手册

HIGH-POWERꢀGaAlAsꢀIRꢀEMITTERS

OD-880F

FEATURES

1.00

MIN.

• High reliability liquid-phase epitaxially grown GaAlAs

• 880nm peak emission for optimum matching with

ODD-45W photodiode

ANODE

(CASE)

GLASS

.209

.220

DOME

.015

• Wide range of linear power output

• Hermetically sealed TO-46 package

• Narrow angle for long distance applications

• OD-880F1 selected to meet minimum radiant intensity

.183 .152

.186 .154

.100

.041

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Window

caps are welded to the case.

.017

.030

.040

.036

45°

CATHODE

.197

.205

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

OD-880F

OD-880F1

Total Power Output, P

I = 100mA

OD-880F

OD-880F1

135

160

Radiant Intensity, I

mW/sr

120

Peak Emission Wavelength, L

880

I = 50mA

Spectral Bandwidth at 50%, $L

Half Intensity Beam Angle, Q

Deg

Volts

I = 100mA

1.9

Forward Voltage, V

1.55

= 10MA

Reverse Breakdown Voltage, V

Capacitance, C

Rise Time

= 0V

Msec

0.5

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10Ms, 400Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

260°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C to 100°C

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

350°C/W Typical

115°C/W Typical

Heat transfer minimized by measuring in still air with minimum heat conducting through leads

Air circulating at a rapid rate to keep case temperature at 25°C

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

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