Datasheet > OD880F

OD880F

更新时间： 2024-09-17 12:48:23

品牌	Logo	应用领域
OPTODIODE		/
页数	文件大小	规格书
2页	261K
描述
HIGH-POWER GaAlAs IR EMITTERS

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OD880F 数据手册

HIGH-POWER GaAlAs IR EMITTERS

OD-880F

FEATURES

1.00

MIN.

• High reliability liquid-phase epitaxially grown GaAlAs

• 880nm peak emission for optimum matching with

ODD-45W photodiode

ANODE

(CASE)

GLASS

.209

.220

DOME

.015

• Wide range of linear power output

• Hermetically sealed TO-46 package

• Narrow angle for long distance applications

.183 .152

.186 .154

.100

All surfaces are gold plated. Dimensions are nominal

values in inches unless otherwise specified. Window

caps are welded to the case.

.041

.017

.030

.040

.036

45°

CATHODE

.197

.205

RoHS

ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

PARAMETERS TEST CONDITIONS

Total Power Output, P

MIN

TYP

MAX

UNITS

I = 100mA

Radiant Intensity, I

120

135

880

mW/sr

Peak Emission Wavelength, λ

I = 50mA

Spectral Bandwidth at 50%, Δλ

Half Intensity Beam Angle, θ

Deg

Volts

I = 100mA

Forward Voltage, V

1.55

1.9

= 10μA

Reverse Breakdown Voltage, V

= 0V

Capacitance, C

Rise Time

0.5

µsec

Fall Time

ABSOLUTE MAXIMUM RATINGS AT 25°C CASE

Power Dissipation

190mW

100mA

Continuous Forward Current

Peak Forward Current (10μs, 400Hz)

Reverse Voltage

Lead Soldering Temperature (1/16" from case for 10sec)

260°C

Derate per Thermal Derating Curve above 25°C

Derate linearly above 25°C

THERMAL PARAMETERS

Storage and Operating Temperature Range

Maximum Junction Temperature

-55°C to 100°C

100°C

Thermal Resistance, R

THJA

Thermal Resistance, R

THJA

350°C/W Typical

115°C/W Typical

Heat transfer minimized by measuring in still air with minimum heat conducting through leads

750 Mitchell Road, Newbury Park, California 91320

Phone: (805) 499-0335, Fax: (805) 499-8108

Email: sales@optodiode.com, Website: www.optodiode.com

Revision February 26, 2013

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