HIGH-POWER GaAlAs IR EMITTERS
OD-880F
FEATURES
1.00
MIN.
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
ANODE
(CASE)
GLASS
.209
.220
DOME
.015
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
.183 .152
.186 .154
.100
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
.041
.017
.030
.040
.036
45°
CATHODE
.197
.205
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS TEST CONDITIONS
Total Power Output, P
MIN
15
TYP
17
MAX
UNITS
mW
o
I = 100mA
F
Radiant Intensity, I
120
135
880
80
mW/sr
nm
e
Peak Emission Wavelength, λ
P
I = 50mA
F
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
nm
8
Deg
Volts
Volts
pF
I = 100mA
F
Forward Voltage, V
F
1.55
30
1.9
I
= 10μA
Reverse Breakdown Voltage, V
5
R
V
R
= 0V
Capacitance, C
Rise Time
17
R
0.5
0.5
µsec
µsec
Fall Time
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
1
Power Dissipation
190mW
100mA
3A
Continuous Forward Current
2
Peak Forward Current (10μs, 400Hz)
Reverse Voltage
5V
Lead Soldering Temperature (1/16" from case for 10sec)
260°C
1
2
Derate per Thermal Derating Curve above 25°C
Derate linearly above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-55°C to 100°C
100°C
1
Thermal Resistance, R
THJA
2
Thermal Resistance, R
THJA
350°C/W Typical
115°C/W Typical
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013