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NX6350EP31-AZ PDF预览

NX6350EP31-AZ

更新时间: 2024-11-02 01:13:07
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页数 文件大小 规格书
6页 1013K
描述
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION

NX6350EP31-AZ 数据手册

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A Business Partner of Renesas Electronics Corporation.  
Preliminary  
NX6350EP Series  
Data Sheet  
LASER DIODE  
R08DS0066EJ0100  
Rev.1.00  
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE  
FOR 40GBASE-LR4 APPLICATION  
Aug 14, 2012  
DESCRIPTION  
The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum  
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with  
InGaAs monitor PIN-PD.  
APPLICATIONS  
40GBASE-LR4  
Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Wide operating temperature range  
InGaAs monitor PIN-PD  
CAN package  
PO = 8.5 mW  
Ith = 8 mA  
ηd = 0.35 W/A  
TC = 5 to +85°C  
φ5.6 mm  
6.2 mm  
Focal point  
R08DS0066EJ0100 Rev.1.00  
Aug 14, 2012  
Page 1 of 5  

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