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NX6352GP29-AZ PDF预览

NX6352GP29-AZ

更新时间: 2024-02-22 04:00:27
品牌 Logo 应用领域
CEL /
页数 文件大小 规格书
6页 1053K
描述
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

NX6352GP29-AZ 数据手册

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A Business Partner of Renesas Electronics Corporation.  
Preliminary  
NX6352GP Series  
Data Sheet  
LASER DIODE  
R08DS0088EJ0100  
Rev.1.00  
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE  
FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION  
Feb 25, 2013  
DESCRIPTION  
The NX6352GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple  
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser  
diode with InGaAs monitor PIN-PD.  
APPLICATIONS  
9.8 Gbps CPRI  
10G E-PON ONU  
FEATURES  
Optical output power  
Low threshold current  
Differential efficiency  
Wide operating temperature range  
InGaAs monitor PIN-PD  
CAN package  
PO = 8.5 mW  
Ith = 7 mA  
ηd = 0.35 W/A  
TC = 40 to +85°C  
φ 5.6 mm  
7.5 mm  
Focal point  
R08DS0088EJ0100 Rev.1.00  
Feb 25, 2013  
Page 1 of 5  

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