Datasheet > NX6406GH-AZ

NX6406GH-AZ

更新时间： 2024-09-26 22:20:31

品牌	Logo	应用领域
CEL		半导体光电二极管激光二极管
页数	文件大小	规格书
5页	383K
描述
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS

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NX6406GH-AZ 数据手册

NECʼs 1490 nm InGaAsP MQW-DFB

LASER DIODE IN CAN PACKAGE

FOR FTTH PON APPLICATIONS

NX6406 SERIES

FEATURES

• OPTICAL OUTPUT POWER:

PO = 5.0 mW

• LOW THRESHOLD CURRENT :

ITH = 10 mA

• DIFFERENTIAL EFFICIENCY:

ηd = 0.3 W/A

• WIDE OPERATING TEMPERATURE RANGE:

TC = -20 to +85°C

• InGaAs MONITOR PIN-PD

• CAN PACKAGE:

ø5.6 mm

• FOCAL POINT:

7.5 mm

DESCRIPTION

NECʼs NX6406 Series is a 1 490 nm Multiple Quantum Well

(MQW) structured Distributed Feed-Back (DFB) laser diode

with InGaAs monitor PIN-PD.

APPLICATION

• FTTH PON (Fiber To The Home Passive Optical Network)

California Eastern Laboratories

12 3 4 5

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型号	品牌	获取价格	描述	数据表
NX6406GK	NEC	获取价格	DFB Laser Diode Emitter, 1480nm Min, 1500nm Max, Through Hole Mount
NX6406GK-AZ	CEL	获取价格	NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
NX6410GH	RENESAS	获取价格	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX6410GH-AZ	RENESAS	获取价格	NX6410GH-AZ
NX6411GH	RENESAS	获取价格	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
NX6414EH	RENESAS	获取价格	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point A
NX6414EH-AZ	RENESAS	获取价格	NX6414EH-AZ
NX6504	CEL	获取价格	1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
NX6504GH	CEL	获取价格	1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
NX6504GH	RENESAS	获取价格	1550 nm, LASER DIODE, CAN PACKAGE-4