Datasheet > NX6504SJ

NX6504SJ

更新时间： 2024-09-29 03:45:35

品牌	Logo	应用领域
CEL		光纤光电二极管激光二极管
页数	文件大小	规格书
4页	95K
描述
1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS

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NX6504SJ 数据手册

NEC's1550 nm InGaAsP MQW DFB

LASER DIODE IN CAN PACKAGE

NX6504 Series

FOR FIBER OPTIC COMMUNICATIONS

DESCRIPTION

FEATURES

• OPTICAL OUTPUT POWER:

PO = 5.0 mW

• LOW THRESHOLD CURRENT:

ITH = 12 mA

• HIGH SPEED:

tr, tf = 0.5 ns MAX

NEC's NX6504 Series is a 1550 nm Multiple Quantum Well

(MQW) structured Distributed Feed-Back (DFB) laser diode

with InGaAs monitor PIN-PD. This device is ideal for Synchro-

nous Digital Hierarchy (SDH) system, STM-1/OC-3, STM-4/

OC-12 and ITU-T recommendations.

• SMSR:

45 dB

• WIDE OPERATING TEMPERATURE RANGE:

TC = -10 to +85°C

• InGaAs MONITOR PIN-PD

• CAN PACKAGE:

ø5.6 mm

• BASED ON TELCORDIA RELIABILITY

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PART NUMBER

NX6504 Series

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

VOP

ITH

Operating Voltage, PO = 5.0 mW, TC = -10 to +85°C

–

1.0

1.5

Threshold Current

–

TC = 85°C

PTH

ηd

Threshold Output Power, TC = -10 to +85°C, IF = ITH

µW

W/A

–

200

–

Differential Efficiency

0.15

-3.0

0.25

-1.5

ηd (@ 85°C)

ηd (@ 25°C)

∆ηd

Temperature Dependence

of Differential Efficiency

–

∆ηd = 10 log

λp

SMSR

θ⊥

Peak Emission Wavelength,

PO = 5.0 mW, RMS (-20 dB), TC = -10 to +85°C

1530

–

1570

Side mode Suppression Ratio

PO = 5.0 mW, TC = -10 to +85°C

Vertical Beam Angle¹,(Refer to Definitions)

PO = 5.0 mW, FAHM²

deg

–

θ||

Lateral Beam Angle¹, PO = 5.0 mW, FAHM²

Rise Time, 10 to 90%

–

0.05

0.2

0.5

Fall Time, 10 to 90%

–

0.5

Monitor Current, PO = 5.0 mW, VR = 5 V

µA

200

600

1000

Monitor Dark Current,

VR = 5 V

–

0.1

–

500

VR = 5 V, TC = -10 to +85°C

Monitor PD Terminal Capacitance, VR = 5 V, f = 1 MHz

–

Tracking Error³Im = const, (@ PO = 5.0 mW, TC = 25°C)

TC = -10 to +85°C

-1.0

1.0

Notes:

1. Applicable only to NX6504S Series.

2. FAHM: Full Angle at Half Maximum.

3. Tracking Error: γ

(mW)

5.0

γ =

|10 log

[dB]

C = 25°C

5.0

TC = -10 to +85°C

(mA)

California Eastern Laboratories

12 3 4

中文翻译

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与NX6504SJ相关器件

型号	品牌	获取价格	描述	数据表
NX6504SJ-A	NEC	获取价格	Laser Diode, 1550nm, CAN PACKAGE-4
NX6504SK	CEL	获取价格	1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
NX6504SK-A	RENESAS	获取价格	Laser Diode, 1550nm, CAN PACKAGE-4
NX6506	CEL	获取价格	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICA
NX6506GH	NEC	获取价格	DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE
NX6506GH-A	NEC	获取价格	DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE
NX6506GH-AZ	CEL	获取价格	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICA
NX6506GK	NEC	获取价格	DFB Laser Diode Emitter, 1530nm Min, 1570nm Max, 1250Mbps, Through Hole Mount, CAN PACKAGE
NX6506GK-AZ	CEL	获取价格	NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICA
NX6508	CEL	获取价格	NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

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