Datasheet > NX6508-AZ

NX6508-AZ

更新时间： 2024-01-26 02:52:29

品牌	Logo	应用领域
CEL		二极管激光二极管
页数	文件大小	规格书
4页	334K
描述
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS

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数据手册

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NX6508-AZ 数据手册

PRELIMINARY DATA SHEET

NEC's InGaAsP

NX6508

Series

MQW-DFB LASER DIODE

IN CAN PACKAGE FOR

2.5 Gb/s, CWDM APPLICATIONS

FEATURES

• OPTICAL OUTPUT POWER

PO = 5.0 mW

•

PEAK EMISSION WAVELENGTH

λp = 1 470 to 1 610 nm

(Based on ITU-T recommendations)

• LOW THRESHOLD CURRENT

Ith = 10 mA

• HIGH SPEED

tr = 100 ps MAX

•

SIDE MODE SUPPRESSION RATIO

SMSR = 40 dB

• OPERATING CASE TEMPERATURE RANGE

TC = -20 to +85°C

DESCRIPTION

• InGaAs MONITOR PIN-PD

NEC's NX6508 Series are 1 470 to 1 610 nm Multiple

Quantum Well (MQW) structured Distributed Feed-Back

(DFB) laser diode with InGaAs monitor PIN-PD. These

devices are ideal for 2.5 Gb/s CWDM application.

• CAN PACKAGE

Ø5.6 mm

• BASED ON TELCORDIA RELIABILITY

ELECTRO-OPTICAL CHARACTERISTICS (TC = -20 to +85°C, unless otherwise speciﬁed)

PART NUMBER

NX6508 SERIES

SYMBOLS

PARAMETER AND CONDITIONS

Optical Output Power from Fiber, CW

UNIT

MIN.

TYP.

MAX.

5.0

Vop

Ith

Operating Voltage, Po = 5.0 mW

1.1

1.6

Threshold Current, TC = 25°C

ηd

Differential Efﬁciency

Po = 5.0 mW, TC = 25°C

Po= 5.0 mW

W/A

0.18

0.10

−3.0

0.25

Δηd

Temperature Dependence of Differential Efﬁciency

−1.6

ηd (@ TC°C)

Δηd = 10 log

ηd (@ 25°C)

λp

Peak Emission Wavelength, Po = 5.0 mW

nm/°C

λp−2

0.08

λp

λp+2

Δλ/ΔT

SMSR

Temperature Dependence of Peak Emission Wavelength, CW

Side Mode Suppression Ratio, Po = 5.0 mW

0.1

0.12

Rise Time, 20-80%, Po = 5.0 mW

100

Continued on next page

California Eastern Laboratories

12 3 4

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