Datasheet > NX6353EP33-AZ

NX6353EP33-AZ

更新时间： 2024-01-08 14:57:03

品牌	Logo	应用领域
CEL		光电半导体
页数	文件大小	规格书
6页	714K
描述
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION

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中文翻译

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技术参数
数据手册

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NX6353EP33-AZ 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.59	最大正向电流：	0.12 A
最大正向电压：	2 V	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	85 °C	最低工作温度：	-40 °C
光电设备类型：	LASER DIODE	峰值波长：	1330 nm
最长响应时间：	5e-11 s	半导体材料：	AlGaInAs
子类别：	Laser Diodes	表面贴装：	NO
Base Number Matches：	1

NX6353EP33-AZ 数据手册

A Business Partner of Renesas Electronics Corporation.

Preliminary

NX6353EP Series

Data Sheet

LASER DIODE

R08DS0089EJ0100

Rev.1.00

1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION

Feb 25, 2013

DESCRIPTION

The NX6353EP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple

Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode

with InGaAs monitor PIN-PD.

APPLICATIONS

•

9.8 Gbps CPRI

10G Ethernet

FEATURES

•

Optical output power

Low threshold current

Differential efficiency

Wide operating temperature range

InGaAs monitor PIN-PD

CAN package

P_O= 8.5 mW

I_th= 7 mA

η_d= 0.35 W/A

T_C= −40 to +85°C

φ 5.6 mm

6.2 mm

Focal point

R08DS0089EJ0100 Rev.1.00

Feb 25, 2013

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