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NVH4L060N090SC1

更新时间： 2024-11-20 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 917K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 60 mohm, 900 V, M2, TO247−4L

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NVH4L060N090SC1 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 60 mohm, 900ꢀV,  
M2, TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
900 V  
84 mW @ 15 V  
46 A  
D
NVH4L060N090SC1  
Features  
• Typ. R  
= 60 mW @ V = 15 V  
GS  
= 43 mW @ V = 18 V  
GS  
DS(on)  
G
Typ. R  
DS(on)  
S1: Kelvin Source  
S2: Power Source  
• Ultra Low Gate Charge (typ. Q  
= 87 nC)  
G(tot)  
• Low Effective Output Capacitance (typ. C = 113 pF)  
oss  
S2 S1  
N−CHANNEL MOSFET  
• 100% UIL Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC−DC converter for EV/HEV  
D
S2  
S1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
TO247−4L  
CASE 340CJ  
V
DSS  
900  
V
V
V
Gate−to−Source Voltage  
V
GS  
+22/−8  
−5/+15  
Recommended Opera-  
tion Values of Gate−to−  
Source Voltage  
V
GSop  
MARKING DIAGRAM  
T
C
< 175°C  
Continuous Drain  
Current R  
I
46  
A
D
Steady  
State  
q
JC  
T
= 25°C  
C
Power Dissipation R  
P
221  
32  
W
A
q
D
JC  
JC  
&Z&3&K  
H4L060  
N090SC1  
Continuous Drain  
Current R  
I
D
Steady  
State  
q
JC  
T
C
= 100°C  
Power Dissipation R  
P
110  
211  
W
A
q
D
Pulsed Drain Current  
(Note 2)  
I
DM  
T = 25°C  
A
Single Pulse Surge Drain  
Current Capability  
(Note 3)  
I
320  
A
DSC  
T = 25°C, t = 10 ms,  
A
p
R
= 4.7 W  
G
&Z  
&3  
&K  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
Operating Junction and Storage Temperature  
Range  
T , T  
J
−55 to  
+175  
°C  
stg  
NVH4L060N090SC1 = Specific Device Code  
Source Current (Body Diode)  
I
S
22  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
162  
mJ  
Energy (I  
= 18 A, L = 1 mH) (Note 4)  
L(pk)  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
30 Units /  
Tube  
TO247−4L  
NVH4L060N090SC1  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Junction−to−Case (Note 1)  
Junction−to−Ambient (Note 1)  
Symbol  
Value  
0.68  
40  
Unit  
°C/W  
°C/W  
R
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. Peak current might be limited by transconductance.  
4. E of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A, V = 100 V, V = 15 V.  
AS  
J
AS  
DD  
GS  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
May, 2022 − Rev. 2  
NVH4L060N090SC1/D  
 
1234567

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