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NVH4L022N120M3S PDF预览

NVH4L022N120M3S

更新时间： 2024-11-20 11:12:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 442K
描述
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L

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NVH4L022N120M3S 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – EliteSiC,  
22 mohm, 1200ꢀV, M3S,  
TO-247-4L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
1200 V  
30 mꢀ @ 18 V  
89 A  
D
NVH4L022N120M3S  
Features  
G
• Typ. R  
= 22 mꢀ @ V = 18 V  
GS  
DS(on)  
S1: Driver Source  
S2: Power Source  
• Ultra Low Gate Charge (Q  
= 137 nC)  
G(tot)  
S1  
S2  
• High Speed Switching with Low Capacitance (C = 146 pF)  
oss  
N−CHANNEL MOSFET  
• 100% Avalanche Tested  
• AEC−Q101 Qualified and PPAP Capable  
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC-DC Converter for EV/HEV  
D
S2  
S1  
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
TO−247−4L  
CASE 340CJ  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
1200  
Unit  
V
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
V
−10/+22  
−3/+18  
V
GS  
Recommended Operation Values  
of Gate−to−Source Voltage  
T
< 175°C  
= 25°C  
V
GSop  
V
C
Continuous Drain  
Current (Notes 1, 3)  
Steady  
State  
T
I
89  
348  
62  
A
W
A
H4L022  
120m3s  
AYWWZZ  
C
D
Power Dissipation  
(Note 1)  
P
D
Continuous Drain  
Current (Notes 1, 3)  
Steady  
State  
T
C
= 100°C  
I
D
H4L022120M3S = Specific Device Code  
Power Dissipation  
(Note 1)  
P
174  
275  
W
A
D
A
Y
= Assembly Location  
= Year  
Pulsed Drain Current  
(Note 2)  
T
C
= 25°C  
I
DM  
WW = Work Week  
ZZ  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
A
J
stg  
+175  
ORDERING INFORMATION  
Source Current (Body Diode)  
I
S
72  
T
C
= 25°C V = −3 V (Note 1)  
GS  
Device  
Package  
Shipping  
Single Pulse Drain−to−Source Avalanche  
Energy (I = 23.1 A, L = 1 mH) (Note 4)  
E
267  
270  
mJ  
°C  
AS  
NVH4L022N120M3S TO−247−4L  
30 Units /  
Tube  
L(pk)  
Maximum Lead Temperature for Soldering  
(1/25″ from case for 10 s)  
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. The maximium current rating is based on typical R  
performance.  
AS  
DS(on)  
4. E of 267 mJ is based on starting T = 25°C; L = 1 mH, I = 23.1 A,  
AS  
DD  
J
V
= 100 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
May, 2023 − Rev. 3  
NVH4L022N120M3S/D  
 
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