Datasheet > NUP1105LT1G

NUP1105LT1G

更新时间： 2024-11-07 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	317K
描述
反向截止电压（Vrwm）:24V;极性/通道数（Channel）:2-Line，Unidirectional;击穿电压（VBR):25.7V;峰值脉冲电流(Ipp):5A;最大钳位电压(Vc):40V;电容（Cj）:30pF

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NUP1105LT1G 数据手册

UMW

NUP1105LT1G

The NUP1105L has been designed to protect LIN and single

line CAN transceivers from ESD and other harmful transient

voltage events. This device provides bidirectional protection

for the data line with a single SOT−23 package, giving the

system designer a low cost option for improving system

reliability .

1 _{Device Schematic}

Applications

Features

• Industrial Control Networks

• SOT−23 Package Allows One Separate Bidirectional Configuration

DeviceNet™

•

• 350 W Peak Power Dissipation per Line (8 x 20 ꢀsec Waveform)

• Low Reverse Leakage Current (< 100 nA)

• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4

− IEC 61000−4−4 (EFT): 40 A – 5/50 ns

− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)

• ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD

• ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD

EMI Surge Pulses

www.umw-ic.com

UTD Semiconductor Co.,Limited

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