Datasheet > NT256D64SH8B0GM-75B

NT256D64SH8B0GM-75B

更新时间： 2024-09-13 10:31:27

品牌	Logo	应用领域
其他 - ETC		内存集成电路动态存储器双倍数据速率时钟
页数	文件大小	规格书
15页	805K
描述
200pin Unbuffered DDR SO-DIMM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NT256D64SH8B0GM-75B 数据手册

浏览型号NT256D64SH8B0GM-75B的Datasheet PDF文件第2页

浏览型号NT256D64SH8B0GM-75B的Datasheet PDF文件第3页

浏览型号NT256D64SH8B0GM-75B的Datasheet PDF文件第4页

浏览型号NT256D64SH8B0GM-75B的Datasheet PDF文件第5页

浏览型号NT256D64SH8B0GM-75B的Datasheet PDF文件第6页

NT256D64SH8B0GM

256MB : 32M x 64

PC2100 Unbuffered DDR SO-DIMM

200pin Unbuffered DDR SO-DIMM Based on DDR266 16Mx16 SDRAM

Features

• JEDEC Standard 200-Pin Small Outline Dual In-Line Memory

• Data is read or written on both clock edges

Module (SO-DIMM)

• DRAM DLL aligns DQ and DQS transitions with clock

transitions.

• 32Mx64 Double Unbuffered DDR SO-DIMM based on 16Mx16

DDR SDRAM.

• Performance:

PC2100

• Address and control signals are fully synchronous to positive

clock edge

• Programmable Operation:

- DIMM CAS Latency: 2, 2.5

Unit

Speed Sort

DIMM CAS Latency

f CK Clock Frequency

t CK Clock Cycle

-75B

2.5

- Burst Type: Sequential or Interleave

- Burst Length: 2, 4, 8

133

7.5

MHz

- Operation: Burst Read and Write

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

• 13/9/2 Addressing (row/column/bank)

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect

f DQ DQ Burst Frequency

266

MHz

• Intended for 133 MHz applications

• Inputs and outputs are SSTL-2 compatible

• VDD = 2.5Volt ± 0.2, VDDQ = 2.5Volt ± 0.2

• SDRAMs have 4 internal banks for concurrent operation

• Module has two physical banks

• Gold contacts

• SDRAMs in 66-pin TSOP Type II Package

• Differential clock inputs

Description

NT256D64SH8B0GM is an unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual In-Line Memory

Module (SO-DIMM), organized as a two-bank 32Mx64 high-speed memory array. The module uses eight 16Mx16 DDR SDRAMs in 400

mil TSOP II packages. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The

use of these common design files minimizes electrical variation between suppliers. All NANYA DDR SDRAM DIMMs provide a

high-performance, flexible 8-byte interface in a 2.66” long space-saving footprint.

The DIMM is intended for use in applications operating up to 133 MHz clock speeds and achieves high-speed data transfer rates of up to

266 MHz. Prior to any access operation, the device CAS latency and burst type/ length/operation type must be programmed into the

DIMM by address inputs A0-A12 and I/O inputs BA0 and BA1 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of

serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

Ordering Information

Part Number

Speed

133MHz (7.5ns @ CL = 2.5)

100MHz (10ns @ CL = 2)

Organization

32Mx64

Leads

Gold

Power

2.5V

NT256D64SH8B0GM-75B

DDR266B

PC2100

REV 1.3

01/2003

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

12 3 4 5 6 7...15

中文翻译

下载PDF

与NT256D64SH8B0GM-75B相关器件

型号	品牌	获取价格	描述	数据表
NT256D72S890G-5T	ETC	获取价格	184 pin Unbuffered DDR DIMM
NT256D72S89AKGU	ETC	获取价格	184pin Low Profile Registered DDR SDRAM MODULE
NT256D72S89AKGU-75B	ETC	获取价格	184pin Low Profile Registered DDR SDRAM MODULE
NT256D72S89AKGU-7K	ETC	获取价格	184pin Low Profile Registered DDR SDRAM MODULE
NT256D72S89AKGU-8B	ETC	获取价格	184pin Low Profile Registered DDR SDRAM MODULE
NT256D72S89B0G	ETC	获取价格	184 pin Unbuffered DDR DIMM
NT256S64V8HC0G	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module
NT256S64V8HC0G-75B	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module
NT256S64V8HC0G-7K	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module
NT256S64V8HC0G-8B	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module

与NT256D64SH8B0GM-75B相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

78
AIC1781A 电池充电控制器深度解析
2024-09-03

69
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

100
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

114

产品中心

服务支持

精选活动

关于我们

帮助中心

NT256D64SH8B0GM-75B

NT256D64SH8B0GM-75B 数据手册

与NT256D64SH8B0GM-75B相关器件

与NT256D64SH8B0GM-75B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NT256D64SH8B0GM-75B

NT256D64SH8B0GM-75B 数据手册

与NT256D64SH8B0GM-75B相关器件

与NT256D64SH8B0GM-75B相关文章

您还可以找

您在本页遇到什么问题？