Datasheet > NT256S64V8HC0G-75B

NT256S64V8HC0G-75B

更新时间： 2024-10-31 10:31:27

品牌	Logo	应用领域
其他 - ETC		内存集成电路动态存储器时钟
页数	文件大小	规格书
10页	143K
描述
32Mx64 bit Two Bank Unbuffered SDRAM Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NT256S64V8HC0G-75B 数据手册

浏览型号NT256S64V8HC0G-75B的Datasheet PDF文件第2页

浏览型号NT256S64V8HC0G-75B的Datasheet PDF文件第3页

浏览型号NT256S64V8HC0G-75B的Datasheet PDF文件第4页

浏览型号NT256S64V8HC0G-75B的Datasheet PDF文件第5页

浏览型号NT256S64V8HC0G-75B的Datasheet PDF文件第6页

NT256S64V8HC0G

256MB : 32M x 64

Unbuffered SDRAM Module

32Mx64 bit Two Bank Unbuffered SDRAM Module

based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

Features

168-Pin Unbuffered 8-Byte Dual In-Line Memory Module

Intended for PC133 applications

- Clock Frequency: 133MHz

Automatic and controlled Precharge commands

Programmable Operation:

- CAS Latency: 2, 3

- Clock Cycle: 7.5ns

- Burst Type: Sequential or Interleave

- Burst Length: 1, 2, 4, 8

- Clock Assess Time: 5.4ns

Inputs and outputs are LVTTL (3.3V) compatible

Single 3.3V ± 0.3V Power Supply

Single Pulsed RAS interface

- Operation: Burst Read and Write or Multiple Burst Read with

Single Write

Suspend Mode and Power Down Mode

4096 Refresh cycles distributed across 64ms

Gold contacts

SDRAMs have 4 internal banks

Module has 2 physical bank

Fully Synchronous to positive Clock Edge

Data Mask for Byte Read/Write control

Auto Refresh (CBR) and Self Refresh

SDRAMs in TSOP Type II Package

Serial Presence Detect with Write Protect

Description

NT256S64V8HC0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which is organized as 32Mx64

high-speed memory arrays and is configured as two 16M x 64 physical bank. The DIMM uses sixteen 16Mx8 SDRAMs in 400mil TSOP II

pack-ages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that

supports the JEDEC 1N rule while allowing very low burst power.

All control, address, and data input/output circuits are synchronized with the positive edge of the externally supplied clock inputs.

All inputs are sampled at the positive edge of each externally supplied clock (CK0 - CK3). Internal operating modes are defined by combinations

, WE ,

, DQMB, and CKE0 – CKE1 signals. A command decoder initiates the necessary timings for each operation. A

RAS CAS

S0 S3

14-bit address bus accepts address information in a row / column multiplexing arrangement.

Prior to any Access operation, the

latency, burst type, burst length, and Burst operation type must be programmed into the DIMM by

CAS

address inputs A0-A9 during the Mode Register Set cycle. The DIMM uses serial presence detects implemented via a serial EEPROM using

the two-pin IIC protocol. The first 128 bytes of serial PD data are used by the DIMM manufacturer. The last 128 bytes are available to the

customer.

Ordering Information

Speed

Part Number

NT256S64V8HC0G-7K

NT256S64V8HC0G-75B

Organization

32Mx64

Leads

Gold

Power

3.3V

MHz.

t RCD

t RP

143MHz

133MHz

100MHz

125MHz

100MHz

NT256S64V8HC0G-8B

* CL = CAS Latency

Preliminary 10 / 2001

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

12 3 4 5 6 7...10

中文翻译

下载PDF

与NT256S64V8HC0G-75B相关器件

型号	品牌	获取价格	描述	数据表
NT256S64V8HC0G-7K	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module
NT256S64V8HC0G-8B	ETC	获取价格	32Mx64 bit Two Bank Unbuffered SDRAM Module
NT256S72V89A0G	ETC	获取价格	32Mx72 bit One Bank Unbuffered SDRAM Module
NT256S72V89A0G-75B	ETC	获取价格	32Mx72 bit One Bank Unbuffered SDRAM Module
NT256S72V89A0G-7K	ETC	获取价格	32Mx72 bit One Bank Unbuffered SDRAM Module
NT256S72V89A0G-8B	ETC	获取价格	32Mx72 bit One Bank Unbuffered SDRAM Module
NT2907	NEC	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
NT2907A	NEC	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
NT2A	TTELEC	获取价格	Semi-precision non-inductive power wirewound resistor
NT2A69	TTELEC	获取价格	Semi-precision non-inductive power wirewound resistor

与NT256S64V8HC0G-75B相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

20
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

21
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

53

产品中心

服务支持

精选活动

关于我们

帮助中心

NT256S64V8HC0G-75B

NT256S64V8HC0G-75B 数据手册

与NT256S64V8HC0G-75B相关器件

与NT256S64V8HC0G-75B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NT256S64V8HC0G-75B

NT256S64V8HC0G-75B 数据手册

与NT256S64V8HC0G-75B相关器件

与NT256S64V8HC0G-75B相关文章

您还可以找

您在本页遇到什么问题？