Datasheet > NSVF6001SB6T1G

NSVF6001SB6T1G

更新时间： 2024-11-30 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		射频晶体管
页数	文件大小	规格书
7页	864K
描述
射频晶体管，NPN 单，12 V，100 mA，fT = 6.7 GHz

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVF6001SB6T1G 数据手册

RF Transistor

12 V, 100 mA, f_T= 6.7 GHz,

NPN Single

NSVF6001SB6

This RF transistor is designed for low noise amplifier applications.

CPH package is suitable for use under high temperature environment

because it has superior heat radiation characteristics. This RF

transistor is AEC−Q101 qualified and PPAP capable for automotive

applications.

www.onsemi.com

Features

• Input Voltage Operation: up to 32 V

CPH6

CASE 318DB

• High Gain: |S21e| = 11 dB typ (f = 1 GHz)

• High Cut−off Frequency: f = 6.7 GHz Typ

ELECTRICAL CONNECTION

NPN

• Miniature and Thin 6 Pin Package

• High Collector Dissipation (800 mW)

1, 2, 5, 6

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

1: Collector

2: Collector

3: Base

4: Emitter

5: Collector

6: Collector

Typical Applications

• Low Noise Amplifier for FM Radio

• Low Noise Amplifier for TV

ABSOLUTE MAXIMUM RATINGS (T = 25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Value

Unit

MARKING DIAGRAM

CBO

CEO

EBO

HGA MG

100

Collector Dissipation (Note 1)

800

Operating Junction and Storage

Temperature

T , T

−55 to +150

stg

HGA = Specific Device Code

= One Digit Data Code

= Pb−Free Marking

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on ceramic substrate (250 mm × 0.8 mm).

ORDERING INFORMATION

Device

Package

Shipping

†

NSVF6001SB6T1G

CPH6

3,000 /

(Pb−Free /

Tape & Reel

Halogen Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

December, 2020 − Rev. 0

NSVF6001SB6/D

12 3 4 5 6 7

中文翻译

下载PDF

与NSVF6001SB6T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVF6003SB6	ONSEMI	获取价格	RF Transistor
NSVF6003SB6T1G	ONSEMI	获取价格	RF Transistor
NSVG1001MXTAG	ONSEMI	获取价格	Middle power SPDT RF switch, 8.5GHz, 1.6V
NSVG3109SG6T1G	ONSEMI	获取价格	MMIC, RF Amplifier, 3 V, 16 mA, 0.1 to 3.6 GHz
NSVG3117SG6T1G	ONSEMI	获取价格	MMIC Wideband Amplifier, 5 V, 22.7 mA, 0.1 to 3 GHz, MCPH6
NSVIMD10AMT1G	ONSEMI	获取价格	由 100mA NBRT 和 500mA PBRT 组成的双裸片零件
NSVJ2394SA3	ONSEMI	获取价格	N-Channel JFET
NSVJ2394SA3T1G	ONSEMI	获取价格	N-Channel JFET
NSVJ3557SA3	ONSEMI	获取价格	N-Channel JFET
NSVJ3557SA3T1G	ONSEMI	获取价格	N-Channel JFET