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NSB4904DW1T2G PDF预览

NSB4904DW1T2G

更新时间： 2024-09-13 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
6页 147K
描述
Dual Bias Resistor Transistors

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中文翻译

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NSB4904DW1T2G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：SC-70包装说明：HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.74
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NSB4904DW1T2G 数据手册

 浏览型号NSB4904DW1T2G的Datasheet PDF文件第2页浏览型号NSB4904DW1T2G的Datasheet PDF文件第3页浏览型号NSB4904DW1T2G的Datasheet PDF文件第4页浏览型号NSB4904DW1T2G的Datasheet PDF文件第5页浏览型号NSB4904DW1T2G的Datasheet PDF文件第6页 
NSB4904DW1T1G,  
NSB4904DW1T2G  
Dual Bias Resistor  
Transistors  
NPN and PNP Silicon Surface Mount  
Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
6
5
4
R
R
2
The Bias Resistor Transistor (BRT) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSB4904DW1T1G and  
NSB4904DW1T2G, two complementary BRT devices are housed in  
the SC−88/SOT−363 package which is ideal for low power surface  
mount applications where board space is at a premium.  
1
Q
1
Q
2
R
2
R
1
1
2
3
1
Features  
• Simplifies Circuit Design  
SC−88/SOT−363  
CASE 419B  
STYLE 1  
• Reduces Board Space  
• Reduces Component Count  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING DIAGRAM  
6
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for  
A
Q and Q , − minus sign for Q (PNP) omitted)  
1
2
1
RC MG  
G
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
V
CBO  
CEO  
1
50  
Vdc  
RC = Device Marking  
M
G
= Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
I
C
100  
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See specific ordering information in the ordering information  
table on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 − Rev. 2  
NSB4904DW1T1G/D  
123456

中文翻译

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