NSB8BT

更新时间： 2024-09-12 22:28:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	87K
描述
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

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中文翻译

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数据手册

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NSB8BT 数据手册

NEW PRODUCT

NSB8AT THRU NSB8MT

GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage - 50 to 1000 Volts

Forward Current - 8.0 Amperes

TO-263AA

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ High forward current capability

♦ High surge current capability

0.160 (4.06)

0.190 (4.83)

0.380 (9.65)

0.420 (10.67)

0.045 (1.14)

0.055 (1.40)

0.245 (6.22)

MIN

♦ Low forward voltage drop

♦ Glass passivated chip junction

♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

0.047 (1.19)

0.320 (8.13)

0.360 (9.14)

0.055 (1.40)

0.575 (14.60)

0.625 (15.88)

SEATING

PLATE

0.090 (2.29)

-T-

0.110 (2.79)

MECHANICAL DATA

Case: JEDEC TO-263AA molded plastic body

Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

0.018 (0.46)

0.025 (0.64)

0.095 (2.41)

0.100 (2.54)

0.080 (2.03)

0.110 (2.79)

0.027 (0.686)

0.037 (0.940)

Polarity: As marked

Mounting Position: Any

Weight: 0.08 ounce, 2.24 grams

PIN 1

PIN 2

K - HEATSINK

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

NSB8

SYMBOLS

V_RRM

V_RMS

V_DC

UNITS

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

200

140

200

400

280

400

8.0

600

420

600

800

560

800

1000 Volts

700 Volts

Maximum DC blocking voltage

100

1000 Volts

Amps

Maximum average forward rectified current at T_C=100°C

I_(AV)

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

V_F

175.0

1.1

Amps

Volts

µA

Maximum instantaneous forward voltage at 8.0A

Maximum DC reverse current

at rated DC blocking voltage

T_C=25°C

I_R

10.0

T_C=100°C

100.0

Typical junction capacitance _{(NOTE 1)}

Typical thermal resistance _{(NOTE 2)}

C_J

R_ΘJC

55.0

3.0

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

NOTES:

(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts

(2) Thermal resistance from junction to case mounted on heatsink

4/98

中文翻译

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与NSB8BT相关器件

型号	品牌	获取价格	描述	数据表
NSB8BT/81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
NSB8BT-E3/31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, P
NSB8BT-E3/45	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
NSB8BT-E3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
NSB8BTHE3/45	VISHAY	获取价格	DIODE GEN PURP 100V 8A TO263AB
NSB8BTHE3/81	VISHAY	获取价格	DIODE GEN PURP 100V 8A TO263AB
NSB8BT-HE3/81	VISHAY	获取价格	DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
NSB8BTHE3_A/I	VISHAY	获取价格	DIODE GEN PURP 100V 8A TO263AB
NSB8BTHE3_A/P	VISHAY	获取价格	DIODE GEN PURP 100V 8A TO263AB
NSB8DT	VISHAY	获取价格	GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

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