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NSB8AT-HE3/81 PDF预览

NSB8AT-HE3/81

更新时间: 2024-10-31 14:36:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 128K
描述
DIODE 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

NSB8AT-HE3/81 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:NBase Number Matches:1

NSB8AT-HE3/81 数据手册

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NS(F,B)8AT thru NS(F,B)8MT  
Vishay General Semiconductor  
Glass Passivated General Purpose Plastic Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Glass passivated chip junction  
• Low forward voltage drop  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF  
maximum peak of 245 °C (for TO-263AB  
package)  
2
2
1
1
NS8xT  
PIN 1  
NSF8xT  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TO-263AB  
K
TYPICAL APPLICATIONS  
2
For use in general purpose rectification of power  
supplies, inverters, converters and freewheeling  
diodes application.  
1
NSB8xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
IF(AV)  
8.0 A  
VRRM  
IFSM  
50 V to 1000 V  
125 A  
VF  
1.1 V  
TJ max.  
150 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
8.0  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 100 °C  
100  
1000  
IF(AV)  
Peak forward surge current 8.3 ms single sine-wave  
superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
125  
- 55 to + 150  
1500  
A
°C  
V
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Document Number: 88690  
Revision: 08-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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