MBRS130T3
Preferred Device
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
Features
1.0 AMPERE
30 VOLTS
•ꢀSmall Compact Surface Mountable Package with J-Bend Leads
•ꢀRectangular Package for Automated Handling
•ꢀHighly Stable Oxide Passivated Junction
•ꢀVery Low Forward Voltage Drop (0.6 Volts Max @ 1.0 A, T = 25°C)
J
•ꢀExcellent Ability to Withstand Reverse Avalanche Energy Transients
•ꢀGuardring for Stress Protection
•ꢀPb-Free Package is Available
SMB
CASE 403A
PLASTIC
Mechanical Characteristics
•ꢀCase: Epoxy, Molded
•ꢀWeight: 95 mg (approximately)
MARKING DIAGRAM
•ꢀFinish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AYWW
B13G
G
•ꢀLead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•ꢀShipped in 12 mm Tape and Reel, 2500 units per reel
•ꢀCathode Polarity Band
A
= Assembly Location
= Year
= Work Week
Y
WW
G
MAXIMUM RATINGS
= Pb-Free Package
(Note: Microdot may be in either location)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
30
V
RRM
V
RWM
V
R
ORDERING INFORMATION
Average Rectified Forward Current
(T = 115°C)
I
1.0
40
A
A
F(AV)
†
Device
Package
Shipping
L
MBRS130T3
MBRS130T3G
SMB
2500/Tape & Reel
2500/Tape & Reel
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
SMB
(Pb-Free)
Operating Junction Temperature
T
-65 to +125
°C
J
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Preferred devices are recommended choices for future use
Rating
Symbol
Value
Unit
and best overall value.
Thermal Resistance, Junction-to-Lead
(T = 25°C)
R
q
JL
12
°C/W
L
©ꢀ Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 7
1
Publication Order Number:
MBRS130T3/D