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NRVBS540T3G

更新时间： 2024-09-29 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
6页 56K
描述
Schottky Power Rectifier, Surface Mount, 5.0 A, 40 V

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NRVBS540T3G 数据手册

 浏览型号NRVBS540T3G的Datasheet PDF文件第2页浏览型号NRVBS540T3G的Datasheet PDF文件第3页浏览型号NRVBS540T3G的Datasheet PDF文件第4页浏览型号NRVBS540T3G的Datasheet PDF文件第5页浏览型号NRVBS540T3G的Datasheet PDF文件第6页 
MBRS540T3  
Preferred Device  
Surface Mount Schottky  
Power Rectifier  
The MBRS540T3 employs the Schottky Barrier principle in a large  
area metal−to−silicon power diode. State−of−the−art geometry  
features epitaxial construction with oxide passivation and metal  
overlay contact. Ideally suited for low voltage, high frequency  
rectification, or as free wheeling and polarity protection diodes in  
surface mount applications where compact size and weight are critical  
to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
5.0 AMPERES  
40 VOLTS  
• Pb−Free Package is Available  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Excellent Ability to Withstand Reverse Avalanche Energy Transients  
• Guardring for Stress Protection  
MARKING  
DIAGRAM  
Mechanical Characteristics  
SMC  
CASE 403  
PLASTIC  
YWW  
B540  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 217 mg (approximately)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
B540  
Y
W
= Specific Device Code  
= Year  
= Work Week  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Polarity: Notch in Plastic Body Indicates Cathode Lead  
• ESD Rating: Machine Model, C (> 400 V)  
Human Body Model, 3B (> 8000 V)  
ORDERING INFORMATION  
• Device Meets MSL 1 Requirements  
†
Device  
Package  
Shipping  
MAXIMUM RATINGS  
MBRS540T3  
SMC  
2500/Tape & Reel  
2500/Tape & Reel  
Rating  
Symbol  
Value  
Unit  
MBRS540T3G  
SMC  
(Pb−Free)  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
40  
V
RRM  
RWM  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Average Rectified Forward Current  
I
5
A
A
F(AV)  
(At Rated V , T = 105°C)  
R
C
Peak Repetitive Forward Current  
(At Rated V , Square Wave,  
I
10  
FRM  
R
Preferred devices are recommended choices for future use  
and best overall value.  
20 KHz, T = 80°C)  
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
190  
A
FSM  
Storage Temperature Range  
Tstg  
−65 to +150  
−65 to +125  
10,000  
°C  
°C  
Operating Junction Temperature  
T
J
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
R
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not nor-  
mal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
September, 2004 − Rev. 3  
MBRS540T3/D  
123456

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