NRVBS540T3G

更新时间： 2024-11-20 11:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管
页数	文件大小	规格书
6页	56K
描述
Schottky Power Rectifier, Surface Mount, 5.0 A, 40 V

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MBRS540T3

Preferred Device

Surface Mount Schottky

Power Rectifier

The MBRS540T3 employs the Schottky Barrier principle in a large

area metal−to−silicon power diode. State−of−the−art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

rectification, or as free wheeling and polarity protection diodes in

surface mount applications where compact size and weight are critical

to the system.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

Features

5.0 AMPERES

40 VOLTS

• Pb−Free Package is Available

• Small Compact Surface Mountable Package with J−Bend Leads

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• Excellent Ability to Withstand Reverse Avalanche Energy Transients

• Guardring for Stress Protection

MARKING

DIAGRAM

Mechanical Characteristics

SMC

CASE 403

PLASTIC

YWW

B540

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in

• Weight: 217 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

B540

= Specific Device Code

= Year

= Work Week

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Polarity: Notch in Plastic Body Indicates Cathode Lead

• ESD Rating: Machine Model, C (> 400 V)

Human Body Model, 3B (> 8000 V)

ORDERING INFORMATION

• Device Meets MSL 1 Requirements

†

Device

Package

Shipping

MAXIMUM RATINGS

MBRS540T3

SMC

2500/Tape & Reel

Rating

Symbol

Value

Unit

MBRS540T3G

SMC

(Pb−Free)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RRM

RWM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Average Rectified Forward Current

F(AV)

(At Rated V , T = 105°C)

Peak Repetitive Forward Current

(At Rated V , Square Wave,

FRM

Preferred devices are recommended choices for future use

and best overall value.

20 KHz, T = 80°C)

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions

Halfwave, Single Phase, 60 Hz)

190

FSM

Storage Temperature Range

Tstg

−65 to +150

−65 to +125

10,000

°C

Operating Junction Temperature

Voltage Rate of Change (Rated V )

dv/dt

V/ms

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not nor-

mal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

September, 2004 − Rev. 3

MBRS540T3/D

12 3 4 5 6

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