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NRVBSS26T3G PDF预览

NRVBSS26T3G

更新时间： 2023-06-19 14:31:40
品牌 Logo 应用领域
安森美 - ONSEMI 测试光电二极管整流二极管
页数 文件大小 规格书
4页 102K
描述
60 V，2.0 A，肖特基整流器

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中文翻译

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NRVBSS26T3G 技术参数

是否无铅： 含铅生命周期：Active
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknown风险等级：5.58
Is Samacsys：N其他特性：FREE WHEELING DIODE
应用：POWER配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-C2JESD-609代码：e0
湿度敏感等级：NOT SPECIFIED最大非重复峰值正向电流：40 A
元件数量：1相数：1
端子数量：2最大输出电流：2 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
认证状态：COMMERCIAL最大重复峰值反向电压：60 V
表面贴装：YES技术：SCHOTTKY
端子面层：TIN LEAD端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

NRVBSS26T3G 数据手册

 浏览型号NRVBSS26T3G的Datasheet PDF文件第2页浏览型号NRVBSS26T3G的Datasheet PDF文件第3页浏览型号NRVBSS26T3G的Datasheet PDF文件第4页 
SS26  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal−to−silicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
2.0 AMPERES  
60 VOLTS  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guardring for Overvoltage Protection  
• Low Forward Voltage Drop  
• Pb−Free Package is Available  
Mechanical Characteristics:  
• Case: Molded Epoxy  
• Epoxy Meets UL 94, V−O at 0.125 in  
• Weight: 95 mg (approximately)  
• Cathode Polarity Band  
SMB  
CASE 403A  
PLASTIC  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
MARKING DIAGRAM  
• Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix  
to Part Number  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
SS26  
• ESD Ratings: Human Body Model = 3B  
Machine Model = C  
SS26 = Device Code  
• Marking: SS26  
MAXIMUM RATINGS  
ORDERING INFORMATION  
Rating  
Symbol  
Value  
Unit  
†
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
RWM  
V
60  
V
Device  
SS26T3  
Package  
Shipping  
RRM  
V
R
SMB  
2500 / Tape & Reel  
2500 / Tape & Reel  
SS26T3G  
SMB  
(Pb−Free)  
Average Rectified Forward Current  
I
2.0  
40  
A
A
O
(At Rated V , T = 95°C)  
R
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Condi-  
tions Halfwave, Single Phase, 60 Hz)  
I
FSM  
Storage/Operating Case Temperature  
Operating Junction Temperature  
Voltage Rate of Change  
T
stg  
, T  
C
−55 to +150  
−55 to +150  
10,000  
°C  
°C  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
February, 2005 − Rev. 2  
SS26/D  
1234

中文翻译

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