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NRVHP8H200MFDT1G

更新时间： 2024-11-24 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
6页 208K
描述
Switch-Mode Power Rectifier

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中文翻译

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NRVHP8H200MFDT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：R-PDSO-F6Reach Compliance Code：compliant
Factory Lead Time：6 weeks风险等级：1.5
Samacsys Description：Rectifiers PUF 4A 200V IN SO-8FL DUAL DFN-8其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SEPARATE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.91 V
JESD-30 代码：R-PDSO-F6最大非重复峰值正向电流：80 A
元件数量：2相数：1
端子数量：6最高工作温度：175 °C
最低工作温度：-55 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
参考标准：AEC-Q101最大重复峰值反向电压：200 V
最大反向电流：0.5 µA最大反向恢复时间：0.03 µs
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NRVHP8H200MFDT1G 数据手册

 浏览型号NRVHP8H200MFDT1G的Datasheet PDF文件第2页浏览型号NRVHP8H200MFDT1G的Datasheet PDF文件第3页浏览型号NRVHP8H200MFDT1G的Datasheet PDF文件第4页浏览型号NRVHP8H200MFDT1G的Datasheet PDF文件第5页浏览型号NRVHP8H200MFDT1G的Datasheet PDF文件第6页 
NRVHP8H200MFD  
Switch-mode  
Power Rectifier  
This ultrafast rectifier in the dual flag SO−8 flat lead package offers  
designers a unique degree of versatility and design freedom. The two  
devices are electrically independent and can be used separately, as  
common cathode, as common anode or in series as a function of board  
level layout. The exposed pad design provides low thermal resistance.  
The clip attach design creates a package with very efficient die size to  
board area ratio. While thermal performance is nearly the same as the  
DPAK package height and board footprint are less than half.  
www.onsemi.com  
ULTRAFAST RECTIFIER  
8 AMPERES (4x2), 200 VOLTS  
7,8  
5,6  
1,2  
3,4  
Features  
• New Package Provides Capability of Inspection and Probe After  
Board Mounting  
• Low Forward Voltage Drop  
• 175°C Operating Junction Temperature  
• NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING DIAGRAM  
C1 C1  
1
A1  
A1  
A2  
A2  
C1  
C1  
C2  
C2  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
8H200M  
AYWZZ  
• These are Pb−Free and Halide−Free Devices  
C2 C2  
Mechanical Characteristics:  
8H200M = Specific Device Code  
• Case: Epoxy, Molded  
A
Y
= Assembly Location  
= Year  
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
W
ZZ  
= Work Week  
= Lot Traceability  
• Device Meets MSL 1 Requirements  
ORDERING INFORMATION  
Applications  
Device  
Package Shipping†  
DFN8 1500 /  
• Excellent Alternative to DPAK in Space−Constrained Automotive  
Applications  
NRVHP8H200MFDT1G  
(Pb−Free) Tape & Reel  
• Output Rectification in Switching Power Supplies  
• Freewheeling Diode used with Inductive Loads  
NRVHP8H200MFDT3G  
DFN8 5000 /  
(Pb−Free) Tape & Reel  
NRVHP8H200MFDWFT1G DFN8 1500 /  
(Pb−Free) Tape & Reel  
NRVHP8H200MFDWFT3G DFN8  
5000 /  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
October, 2018 − Rev. 1  
NRVHP8H200MFD/D  
123456

中文翻译

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