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NRVBS360BT3GVF01 PDF预览

NRVBS360BT3GVF01

更新时间： 2024-11-19 20:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
8页 238K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 60V V(RRM), Silicon

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中文翻译

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NRVBS360BT3GVF01 技术参数

是否Rohs认证： 符合生命周期：End Of Life
包装说明：R-PDSO-J2Reach Compliance Code：not_compliant
其他特性：FREE WHEELING DIODE应用：POWER
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.63 V
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：125 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
参考标准：AEC-Q101最大重复峰值反向电压：60 V
最大反向电流：30 µA表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NRVBS360BT3GVF01 数据手册

 浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第2页浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第3页浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第4页浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第5页浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第6页浏览型号NRVBS360BT3GVF01的Datasheet PDF文件第7页 
Surface Mount  
Schottky Power Rectifier  
MBRS360T3G,  
MBRS360BT3G,  
NRVBS360T3G,  
NRVBS360BT3G,  
NRVBS360BNT3  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes, in surface mount  
applications where compact size and weight are critical to the system.  
www.onsemi.com  
SCHOTTKY BARRIER  
RECTIFIERS  
3.0 AMPERES, 60 VOLTS  
SMC 2−LEAD  
SMB  
CASE 403AC  
CASE 403A−03  
Features  
• Small Compact Surface Mountable Package with J−Bend Leads  
• Rectangular Package for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Excellent Ability to Withstand Reverse Avalanche Energy Transients  
• Guard−Ring for Stress Protection  
MARKING DIAGRAMS  
AYWW  
B36G  
G
AYWW  
B36G  
G
• NRVBS Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable*  
B36  
A
Y
= Specific Device Code  
= Assembly Location**  
= Year  
= Work Week  
= Pb−Free Package  
WW  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
(Note: Microdot may be in either location)  
Mechanical Characteristics  
**The Assembly Location code (A) is front side  
optional. In cases where the Assembly Location is  
stamped in the package, the front side assembly code  
may be blank.  
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  
• Weight: 217 mg (Approximately), SMC  
95 mg (Approximately), SMB  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
ORDERING INFORMATION  
†
Package  
Device  
Shipping  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
SMC  
(Pb−Free)  
MBRS360T3G  
2,500 /  
Tape & Reel  
260°C Max. for 10 Seconds  
• Polarity: Polarity Band on Plastic Body Indicates Cathode Lead  
• Device Meets MSL 1 Requirements  
MBRS360BT3G  
NRVBS360T3G*  
NRVBS360BT3G*  
SMB  
(Pb−Free)  
2,500 /  
Tape & Reel  
• ESD Ratings:  
2,500 /  
Tape & Reel  
SMC  
(Pb−Free)  
♦ Machine Model, C  
♦ Human Body Model, 3B  
SMB  
(Pb−Free)  
2,500 /  
Tape & Reel  
SMB  
(Pb−Free)  
NRVBS360BT3G  
−VF01*  
2,500 /  
Tape & Reel  
SMB  
(Pb−Free)  
2,500 /  
Tape & Reel  
NRVBS360BNT3G*  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
March, 2020 − Rev. 14  
MBRS360T3/D  
12345678

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