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NRVBS260T3G-VF01 PDF预览

NRVBS260T3G-VF01

更新时间： 2023-06-19 14:31:32
品牌 Logo 应用领域
安森美 - ONSEMI 测试光电二极管整流二极管
页数 文件大小 规格书
4页 136K
描述
肖特基功率整流器，表面贴装，2.0 A，60 V，SMB 封装

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中文翻译

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NRVBS260T3G-VF01 技术参数

是否无铅： 不含铅生命周期：Lifetime Buy
包装说明：SMB,2 PINReach Compliance Code：not_compliant
Factory Lead Time：4 weeks风险等级：5.66
其他特性：FREE WHEEELING DIODE应用：POWER
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.63 V
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：60 A
元件数量：1相数：1
端子数量：2最高工作温度：125 °C
最低工作温度：-55 °C最大输出电流：2 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE参考标准：AEC-Q101
最大重复峰值反向电压：60 V最大反向电流：200 µA
反向测试电压：60 V表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：J BEND端子位置：DUAL
Base Number Matches：1

NRVBS260T3G-VF01 数据手册

 浏览型号NRVBS260T3G-VF01的Datasheet PDF文件第2页浏览型号NRVBS260T3G-VF01的Datasheet PDF文件第3页浏览型号NRVBS260T3G-VF01的Datasheet PDF文件第4页 
MBRS260T3  
Surface Mount  
Schottky Power Rectifier  
SMB Power Surface Mount Package  
This device employs the Schottky Barrier principle in a  
metal−to−siliconpower rectifier. Features epitaxial construction with  
oxide passivation and metal overlay contact. Ideally suited for low  
voltage, high frequency switching power supplies; free wheeling  
diodes and polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
2.0 AMPERES, 60 VOLTS  
Features  
• Compact Package with J−Bend Leads Ideal for Automated Handling  
• Highly Stable Oxide Passivated Junction  
• Guard−Ring for Over−Voltage Protection  
• Low Forward Voltage Drop  
SMB  
CASE 403A  
PLASTIC  
• Pb−Free Package is Available  
Mechanical Characteristics  
• Case: Molded Epoxy  
MARKING DIAGRAM  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• Weight: 95 mg (Approximately)  
AYWW  
B26G  
G
• Cathode Polarity Band  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
• ESD Ratings: Machine Model = C  
Human Body Model = 3B  
B26  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
WW  
G
(Note: Microdot may be in either location)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
60  
V
RRM  
†
Device  
Package  
Shipping  
RWM  
V
R
MBRS260T3  
SMB  
2500/Tape & Reel  
2500/Tape & Reel  
Average Rectified Forward Current  
I
O
2.0  
60  
A
A
MBRS260T3G  
SMB  
(At Rated V , T = 95°C)  
R
L
(Pb−Free)  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Storage Temperature Range  
Operating Junction Temperature  
Voltage Rate of Change  
T
stg  
−55 to +150  
−55 to +125  
10,000  
°C  
°C  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 − Rev. 5  
MBRS260T3/D  
1234

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