5秒后页面跳转
捷配首页

Datasheet > NP042A4
NP042A4 PDF预览

NP042A4

更新时间： 2024-11-21 20:07:07
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
3页 499K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

阅读下载

中文翻译

获取价格

NP042A4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.83
其他特性：BUILT IN BIAS RESISTOR RATIO 4.76最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-F6
JESD-609代码：e6湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Bismuth (Sn/Bi)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

NP042A4 数据手册

 浏览型号NP042A4的Datasheet PDF文件第2页浏览型号NP042A4的Datasheet PDF文件第3页 
Composite Transistors  
NP042A4  
Silicon NPN epitaxial planar type  
For digital circuits  
Unit: mm  
0.12+0.03  
0.02  
Features  
6
5
4
Two elements incorporated into one package (Each transistor is separated)  
SSSMini type package, reduction of the mounting area and assembly cost  
Maximum package height (0.4 mm) contributes to develop thinner equipments  
0 to 0.02  
1
2
3
(0.35) (0.35)  
Basic Part Number  
1.00±0.05  
Display at No.1 lead  
UNR32A4  
2
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
IC  
50  
50  
1: Emitter (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
V
2: Base (Tr1)  
80  
mA  
mW  
°
C  
3: Collector (Tr2)  
6: Collector (Tr1)  
SSSMini6-F1 Package  
Total power dissipation
*  
Junction temperature  
PT  
125  
Tj  
125  
Marking Symbol: BR  
Internal Connection  
Storage temperature  
T
stg  
–55 to +125  
°
C  
Note) : Measuring on substrate at 17 mm 10 mm 1 mm  
*
(C1) (B2) (E2)  
6
5
4
R1  
R2  
10 kΩ  
47 kΩ  
Tr1  
Tr2  
R2  
47 kΩ  
R1  
10 kΩ  
1
2
3
(E1) (B1) (C2)  
Electrical Characteristics 
T
a
=
25
°
C
±
3
°
C  
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)
*  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO I
C
= 10 µA, I
E
= 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, I
E
= 0  
VCE = 50 V, IB = 0  
VEB = 6 V, I
C
= 0  
0.1  
0.5  
0.2  
µA  
µA  
mA  
VCE = 10 V, I
C
= 5 mA  
80  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, R
L
= 1 kΩ  
4.9  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, R
L
= 1 kΩ  
0.2  
+30%  
0.25  
V
Input resistance  
10  
kΩ  
−
30%  
0.17  
Resistance ratio  
R1 / R2  
fT  
0.21  
150  
Transition frequency  
VCB = 10 V, IE = —2 mA, f = 200 MHz  
MHz  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Publication date: June 2005  
SJJ00322AED  
1
123

中文翻译

下载PDF

与NP042A4相关器件

型号 品牌 获取价格 描述 数据表
NP04390 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS C
NP043A1 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
NP043A2 PANASONIC

获取价格

 		Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
NP043A3 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
NP043A6 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
NP043AN PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
NP04401 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS CO
NP04601 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
NP04SA100J TAIYO YUDEN

获取价格

 		General Purpose Inductor, 10uH, 5%, 1 Element, Ferrite-Core, SMD
NP04SA100K TAIYO YUDEN

获取价格

 		General Purpose Inductor, 10uH, 10%, 1 Element, Ferrite-Core, SMD

与NP042A4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证