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NP043A1

更新时间: 2024-11-25 21:07:43
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
5页 643K
描述
Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN

NP043A1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.08 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):35JESD-30 代码:R-PDSO-F6
JESD-609代码:e6湿度敏感等级:1
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

NP043A1 数据手册

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Composite Transistors  
NP043A1  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
0.12+0.03  
0.02  
6
5
4
Features  
0 to 0.02  
Two elements incorporated into one package (Each transistor is separated)  
SSSMini type package, reduction of the mounting area and assembly cost  
Maximum package height (0.4 mm) contributes to develop thinner equipments  
1
2
3
(0.35) (0.35)  
1.00±0.05  
Display at No.1 lead  
Basic Part Number  
UNR32A1 + UNR31A1  
Absolute Maximum Ratings T
a
= 25
°
C  
Parameter  
Symbol  
Rating  
Unit  
1: Emitter (Tr1)  
4: Emitter (Tr2)  
5: Base (Tr2)  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
2: Base (Tr1)  
3: Collector (Tr2)  
6: Collector (Tr1)  
SSSMini6-F1 Package  
Collector-emitter voltage  
(Base open)  
Tr1  
VCEO  
IC  
50  
80  
V
mA  
V
Marking Symbol: 7X  
Collector current  
Internal Connection  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
(C1) (B2) (E2)  
6
5
4
Collector-emitter voltage  
(Base open)  
R1  
Tr2  
R2  
10 k  
VCEO  
V
50  
10 kΩ  
Tr1  
Tr2  
R2  
10 kΩ  
R1  
10 kΩ  
Collector current  
IC  
PT  
Tj  
mA  
mW  
°
C  
80  
125  
Total power dissipation
*  
Junction temperature  
Storage temperature  
1
2
3
(E1) (B1) (C2)  
125  
Overall  
T
stg  
55 to +125  
°
C  
Note) : Measuring on substrate at 17 mm 10 mm 1 mm  
*
Publication date: June 2005  
SJJ00324AED  
1

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