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NP043A2

更新时间： 2024-11-20 21:54:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
4页 109K
描述
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)

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NP043A2 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.82其他特性：BUILT-IN BIAS RESISTOR RATIO 1
最大集电极电流 (IC)：0.08 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F6JESD-609代码：e6
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN AND PNP
认证状态：Not Qualified表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：150 MHzBase Number Matches：1

NP043A2 数据手册

 浏览型号NP043A2的Datasheet PDF文件第2页浏览型号NP043A2的Datasheet PDF文件第3页浏览型号NP043A2的Datasheet PDF文件第4页 
Composite Transistors  
NP043A2  
Silicon NPN epitaxial planar type (Tr1)  
Silicon PNP epitaxial planar type (Tr2)  
Unit: mm  
For digital circuits  
0.12+0.03  
-
0.02  
6
5
4
■ Features  
0 to 0.02  
• SSS-Mini type 6-pin package, reduction of the mounting area and  
assembly cost by one half  
• Maximum package height (0.4 mm) contributes to develop thinner  
equipments  
1
2
3
(0.35) (0.35)  
1.00 0.05  
■ Basic Part Number  
Display at No.1 lead  
•
UNR31A2 + UNR32A2  
■ Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
Tr1  
Tr2  
Collector-base voltage  
(Emitter open)  
VCBO  
50  
V
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Collector (Tr2)  
4: Emitter (Tr2)  
5: Base (Tr2)  
6: Collector (Tr1)  
SSSMini6-F1 Package  
Collector-emitter voltage  
(Base open)  
VCEO  
50  
V
Collector current  
IC  
80  
mA  
V
Marking Symbol: 7T  
Internal Connection  
Collector-base voltage  
(Emitter open)  
VCBO  
−50  
Collector-emitter voltage  
(Base open)  
VCEO  
−50  
V
6
5
4
R1  
Collector current  
IC  
PT  
Tj  
−80  
125  
mA  
mW  
°C  
R2  
22 kΩ  
22 kΩ  
Tr1  
Overall Total power dissipation  
Junction temperature  
125  
Tr2  
R2  
R1  
22 kΩ  
22 kΩ  
Storage temperature  
Tstg  
−55 to +125  
°C  
1
2
3
■ Electrical Characteristics Ta = 25°C 3°C  
• Tr1  
Parameter  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high level  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
VCE = 10 V, IC = 5 mA  
50  
V
0.1  
0.5  
0.2  
µA  
µA  
mA  
ICEO  
IEBO  
hFE  
60  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
0.25  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
4.9  
V
Output voltage low level  
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ  
0.2  
+30%  
1.2  
V
Input resistance  
−30%  
22  
1.0  
150  
kΩ  
Resistance ratio  
R1 / R2  
fT  
0.8  
Transition frequency  
VCB = 10 V, IE = −1 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: April 2004  
SJJ00285AED  
1
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