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NLAS4684MR2G PDF预览

NLAS4684MR2G

更新时间: 2024-10-31 22:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 复用器开关复用器或开关信号电路光电二极管输出元件PC
页数 文件大小 规格书
14页 119K
描述
Ultra-Low Resistance Dual SPDT Analog Switch

NLAS4684MR2G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOIC包装说明:TSSOP, TSSOP10,.19,20
针数:10Reach Compliance Code:compliant
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:226664
Samacsys Pin Count:10Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:Micro10 CASE 846B-03 ISSUE D
Samacsys Released Date:2015-08-26 09:40:31Is Samacsys:N
模拟集成电路 - 其他类型:SPDTJESD-30 代码:S-PDSO-G10
JESD-609代码:e3长度:3 mm
湿度敏感等级:1正常位置:NC
信道数量:1功能数量:2
端子数量:10标称断态隔离度:65 dB
通态电阻匹配规范:0.06 Ω最大通态电阻 (Ron):1 Ω
最高工作温度:125 °C最低工作温度:-55 °C
输出:SEPARATE OUTPUT封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP10,.19,20
封装形状:SQUARE封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:2/5 V
认证状态:Not Qualified座面最大高度:1.1 mm
子类别:Multiplexer or Switches最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):3 V
表面贴装:YES最长断开时间:50 ns
最长接通时间:60 ns切换:BREAK-BEFORE-MAKE
技术:CMOS温度等级:MILITARY
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3 mm
Base Number Matches:1

NLAS4684MR2G 数据手册

 浏览型号NLAS4684MR2G的Datasheet PDF文件第2页浏览型号NLAS4684MR2G的Datasheet PDF文件第3页浏览型号NLAS4684MR2G的Datasheet PDF文件第4页浏览型号NLAS4684MR2G的Datasheet PDF文件第5页浏览型号NLAS4684MR2G的Datasheet PDF文件第6页浏览型号NLAS4684MR2G的Datasheet PDF文件第7页 
NLAS4684  
Ultra−Low Resistance  
Dual SPDT Analog Switch  
The NLAS4684 is an advanced CMOS analog switch fabricated in  
Sub−micron silicon gate CMOS technology. The device is a dual  
Independent Single Pole Double Throw (SPDT) switch featuring  
http://onsemi.com  
Ultra−Low R of 0.5 W, for the Normally Closed (NC) switch, and  
ON  
0.8 W for the Normally Opened switch (NO) at 2.7 V.  
The part also features guaranteed Break Before Make switching,  
assuring the switches never short the driver.  
MARKING  
DIAGRAMS  
The NLAS4684 is available in a 2.0 x 1.5 mm bumped die array.  
The pitch of the solder bumps is 0.5 mm for easy handling.  
4684  
AYWW  
4684  
AYWWG  
A1  
Features  
Microbump−10  
CASE 489AA  
Ultra−Low R , t0.5 W at 2.7 V  
ON  
A1  
A1  
1
Threshold Adjusted to Function with 1.8 V Control at  
V
CC  
= 2.7−3.3 V  
Single Supply Operation from 1.8−5.5 V  
Tiny 2 x 1.5 mm Bumped Die  
Low Crosstalk, t 83 dB at 100 kHz  
1
NLAS  
4684  
NLAS  
4684  
ALYW  
1
ALYW  
G
QFN−10  
CASE 485C  
Full 0−V Signal Handling Capability  
CC  
High Isolation, −65 dB at 100 kHz  
Low Standby Current, t50 nA  
Low Distortion, t0.14% THD  
NLAS  
4684  
R Flatness of 0.15  
W
ON  
ALYW  
Pin for Pin Replacement for MAX4684  
High Continuous Current Capability  
$300 mA Through Each Switch  
1
Micro10  
CASE 846B  
Large Current Clamping Diodes at Analog Inputs  
$300 mA Continuous Current Capability  
Pb−Free Package is Available*  
A
L
Y
= Assembly Location  
= Wafer Lot  
= Year  
WW, W = Work Week  
Applications  
G
= Pb−Free Package  
Cell Phone  
Speaker Switching  
Power Switching  
Modems  
FUNCTION TABLE  
IN 1, 2  
NO 1, 2  
NC 1, 2  
0
1
OFF  
ON  
ON  
Automotive  
OFF  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 11 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 11  
NLAS4684/D  

NLAS4684MR2G 替代型号

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