Datasheet > NESG250134-T1

NESG250134-T1

更新时间： 2024-01-04 09:18:48

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
14页	154K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

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NESG250134-T1 技术参数

NESG250134

THERMAL RESISTANCE (TA = +25°C)

Parameter

Symbol

Rth^j-a

Ratings

Unit

Termal Resistance from Junction to

Ambient^Note

°C/W

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

RECOMMENDED OPERATING RANGE (TA = +25°C)

Parameter

Collector to Emitter Voltage

Collector Current

Symbol

VCE

MIN.

TYP.

3.6

MAX.

4.5

Unit

−

400

500

dBm

Input Power^Note

Note Input power under conditions of V^CE≤ 4.5 V, f = 460 MHz

Data Sheet PU10422EJ03V0DS

123 4 5 6 7...14

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型号	品牌	描述	获取价格	数据表
NESG250134-T1-AZ	CEL	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM	获取价格
NESG250134-T1-AZ	RENESAS	NESG250134-T1-AZ	获取价格
NESG250134-T1-AZ	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG250134-T1-AZFB	RENESAS	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN	获取价格
NESG250134-T1-AZ-FB	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG250134-T1FB	NEC	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	获取价格