生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOP, | 针数: | 14 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 模拟集成电路 - 其他类型: | COMPANDER |
JESD-30 代码: | R-PDSO-G14 | 长度: | 8.65 mm |
端子数量: | 14 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 表面贴装: | YES |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE577D-T | PHILIPS |
获取价格 |
Compander, BIPolar, PDSO20, | |
NE577D-T | YAGEO |
获取价格 |
Compander, 1 Func, 0.02MHz Band Width, PDSO14 | |
NE577N | NXP |
获取价格 |
Unity gain level programmable low power compandor | |
NE577N | YAGEO |
获取价格 |
Compander, 1 Func, 0.02MHz Band Width, PDIP14 | |
NE57800 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN | |
NE57807 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-100VAR | |
NE57810 | NXP |
获取价格 |
Advanced DDR memory termination power with external reference in | |
NE57810S | NXP |
获取价格 |
Advanced DDR memory termination power with external reference in | |
NE57810S/N1 | NXP |
获取价格 |
IC IC,POWER CONTROL/MANAGEMENT,SIP,5PIN,PLASTIC, Bus Terminator | |
NE57810S/N1,518 | NXP |
获取价格 |
NE57810 - Advanced DDR memory termination power with external reference voltage in |