Datasheet > NE57810S-T

NE57810S-T

更新时间： 2024-11-23 21:14:35

品牌	Logo	应用领域
恩智浦 - NXP		接口集成电路
页数	文件大小	规格书
16页	95K
描述
BUS TERMINATOR SUPPORT CIRCUIT, PSSO5

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技术参数
数据手册

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NE57810S-T 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.78
差分输出：	NO	接口集成电路类型：	BUS TERMINATOR SUPPORT CIRCUIT
JESD-30 代码：	R-PSSO-G5	长度：	9.425 mm
功能数量：	1	端子数量：	5
最高工作温度：	70 °C	最低工作温度：
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	座面最大高度：	2.05 mm
最大供电电压：	3.6 V	最小供电电压：	1.6 V
标称供电电压：	2.5 V	表面贴装：	YES
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	1.7 mm	端子位置：	SINGLE
宽度：	8 mm	Base Number Matches：	1

NE57810S-T 数据手册

NE57810

Advanced DDR memory termination power with external

reference voltage in

Rev. 04 — 24 November 2008

Product data sheet

1. Introduction

The NE57810 is designed to provide power for termination of a Double Data Rate (DDR)

SDRAM memory bus. It signiﬁcantly reduces parts count, board space, and overall

system cost compared to previous solutions.

2. General description

The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus

voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A for

sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at

start-up. Overtemperature shutdown protects the device in extreme temperature

situations.

The package is thermally robust for ﬂexibility of thermal design. The NE57810 is a linear

regulator so no external inductors or switching FETs are necessary. Fast response to load

changes reduces the need for output capacitors.

3. Features

I Fast transient response time

I Overtemperature protection

I Overcurrent protection

I Commercial (0 °C to +70 °C) temperature range

I Reduced need for external components (switching FETs, inductors, decoupling

capacitors)

I Internal divider maintains termination voltage at half the memory supply voltage

I Reference out for other memory and control components

I Optional external voltage reference in for ﬂexible application

I Compatible with DDR-I (V_DD= 2.5 V) or DDR-II (V_DD= 1.8 V) SDRAM systems

4. Applications

I Desktop microcomputer systems

I Workstations

I Servers

I Game machines

I Set top boxes

I Embedded systems

12 3 4 5 6 7...16

中文翻译

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与NE57810S-T相关器件

型号	品牌	获取价格	描述	数据表
NE57810TK	NXP	获取价格	IC BUS TERMINATOR SUPPORT CIRCUIT, Bus Terminator
NE57811	NXP	获取价格	Advanced DDR memory termination power with shutdown
NE57811S	NXP	获取价格	Advanced DDR memory termination power with shutdown
NE57811S,518	NXP	获取价格	NE57811 - Advanced DDR memory termination power with shutdown
NE57811S/N1,518	NXP	获取价格	NE57811 - Advanced DDR memory termination power with shutdown
NE57814	NXP	获取价格	DDR memory termination regulator with standby mode and enhanced efficiency
NE57814DD	NXP	获取价格	DDR memory termination regulator with standby mode and enhanced efficiency
NE57814DD,518	NXP	获取价格	IC BUS TERMINATOR SUPPORT CIRCUIT, PDSO8, 3.90 MM, PLASTIC, SOT-786-2, HSOP-8, Bus Termina
NE57814DD/G,518	NXP	获取价格	NE57814 - DDR memory termination regulator with standby mode and enhanced efficiency SOIC
NE57814DD118	NXP	获取价格	BUS TERMINATOR SUPPORT CIRCUIT, PDSO8

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