Datasheet > NE57814DD/G,518

NE57814DD/G,518

更新时间： 2024-11-26 19:58:31

品牌	Logo	应用领域
恩智浦 - NXP		双倍数据速率
页数	文件大小	规格书
16页	196K
描述
NE57814 - DDR memory termination regulator with standby mode and enhanced efficiency SOIC 8-Pin

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NE57814DD/G,518 技术参数

INTEGRATED CIRCUITS

NE57814

DDR memory termination regulator with

standby mode and enhanced efficiency

Product data

2003 Apr 03

Supersedes data of 2003 Jan 22

Philips

Semiconductors

12 3 4 5 6 7...16

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型号	品牌	获取价格	描述	数据表
NE57814DD118	NXP	获取价格	BUS TERMINATOR SUPPORT CIRCUIT, PDSO8
NE57835	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 11V V(BR)CEO \| 30MA I(C) \| SOT-173
NE57835-T1	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN
NE57835-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN
NE578D	PHILIPS	获取价格	Compander, BIPolar, PDSO16,
NE578D	YAGEO	获取价格	Compander, 1 Func, 0.02MHz Band Width, PDSO16
NE578D	NXP	获取价格	IC COMPANDER, PDSO16, Analog Computational Function
NE578D-T	YAGEO	获取价格	Compander, 1 Func, 0.02MHz Band Width, PDSO16
NE578N	PHILIPS	获取价格	Compander, BIPolar, PDIP16,
NE578N	YAGEO	获取价格	Compander, 1 Func, 0.02MHz Band Width, PDIP16