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NE57810S/N1 PDF预览

NE57810S/N1

更新时间: 2024-11-27 09:27:35
品牌 Logo 应用领域
恩智浦 - NXP 功率控制
页数 文件大小 规格书
16页 95K
描述
IC IC,POWER CONTROL/MANAGEMENT,SIP,5PIN,PLASTIC, Bus Terminator

NE57810S/N1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.8
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED

NE57810S/N1 数据手册

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NE57810  
Advanced DDR memory termination power with external  
reference voltage in  
Rev. 04 — 24 November 2008  
Product data sheet  
1. Introduction  
The NE57810 is designed to provide power for termination of a Double Data Rate (DDR)  
SDRAM memory bus. It significantly reduces parts count, board space, and overall  
system cost compared to previous solutions.  
2. General description  
The NE57810 DDR termination regulator maintains an output voltage (DDR reference bus  
voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A for  
sustained periods. Overcurrent limiting protects the NE57810 from inrush currents at  
start-up. Overtemperature shutdown protects the device in extreme temperature  
situations.  
The package is thermally robust for flexibility of thermal design. The NE57810 is a linear  
regulator so no external inductors or switching FETs are necessary. Fast response to load  
changes reduces the need for output capacitors.  
3. Features  
I Fast transient response time  
I Overtemperature protection  
I Overcurrent protection  
I Commercial (0 °C to +70 °C) temperature range  
I Reduced need for external components (switching FETs, inductors, decoupling  
capacitors)  
I Internal divider maintains termination voltage at half the memory supply voltage  
I Reference out for other memory and control components  
I Optional external voltage reference in for flexible application  
I Compatible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM systems  
4. Applications  
I Desktop microcomputer systems  
I Workstations  
I Servers  
I Game machines  
I Set top boxes  
I Embedded systems  

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