NE33284A-T1

更新时间： 2024-09-24 22:27:03

品牌	Logo	应用领域
日电电子 - NEC		放大器
页数	文件大小	规格书
10页	64K
描述
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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中文翻译

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数据手册

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NE33284A-T1 数据手册

DATA SHEET

HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE33284A

L to X BAND SUPER LOW NOISE AMPLIFIER

N-CHANNEL HJ-FET

DESCRIPTION

PACKAGE DIMENSIONS

The NE33284A is a Herero Junction FET that utilizes the

hetero junction to create high mobility electrons. Its excellent

low noise and high associated gain make it suitable for GPS,

TVRO and another commercial systems.

(Unit: mm)

1.78 ±0.2

FEATURES

•

Super Low Noise Figure & High Associated Gain

NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz

Gate Width: W^g= 280 µm

•

ORDERING INFORMATION

SUPPLYING

PART NUMBER

LEAD LENGTH

L = 1.7 mm MIN.

FORM

0.5 TYP.

NE33284A-SL

STICK

NE33284A-T1

Tape & reel L = 1.0 ±0.2 mm

NE33284A-T1A

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage

Drain Current

VDS

VGS

I^D

4.0

–3.0

1. Source

2. Drain

3. Source

4. Gate

IDSS

˚ C

Total Power Dissipation

Channel Temperature

Storage Temperature

Ptot

Tch

T^stg

165

150

–65 to +150

RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)

CHARACTERISTIC

Drain to Source Voltage

Drain Current

SYMBOL

MIN.

TYP.

MAX.

Unit

VDS

dBm

Input Power

Document No. P10874EJ2V0DS00 (2nd edition)

(Previous No. TD-2369)

Date Published October 1995 P

Printed in Japan

1995

12 3 4 5 6 7...10

中文翻译

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与NE33284A-T1相关器件

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NE334S01	NEC	获取价格	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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